Abstract:We report novel properties derived from scanning tunnelling spectroscopic (STS) studies of Dirac fermions in graphene and the surface state (SS) of a strong topological insulator (STI), Bi2Se3. For mono-layer graphene grown on Cu by chemical vapour deposition (CVD), strain-induced scalar and gauge potentials are manifested by the charging effects and the tunnelling conductance peaks at quantized energies, respectively. Additionally, spontaneous time-reversal symmetry breaking is evidenced by the alternating anti-localization and localization spectra associated with the zero-mode of two sublattices while global time-reversal symmetry is preserved under the presence of pseudo-magnetic fields. For Bi2Se3 epitaxial films grown on Si(111) by molecular beam epitaxy (MBE), spatially localized unitary impurity resonances with sensitive dependence on the energy difference between the Fermi level and the Dirac point are observed for samples thicker than 6 quintuple layers (QL). These findings are characteristic of the SS of a STI and are direct manifestation of strong topological protection against impurities. For samples thinner than 6-QL, STS studies reveal the openup of an energy gap in the SS due to overlaps of wave functions between the surface and interface layers. Additionally, spin-preserving quasiparticle interference wave-vectors are observed, which are consistent with the Rashba-like spin-orbit splitting.

Scanning Tunneling Microscopy Studies of Topological Insulators Grown by Molecular Beam Epitaxy

Scanning Tunneling Microscopy Studies of Topological Insulators.

Molecular beam epitaxial growth of topological insulators.

Scanning Tunnelling Spectroscopic Studies of Dirac Fermions in Graphene and Topological Insulators

Observing Electronic Structures on Ex-Situ Grown Topological Insulator Thin Films

Scanning tunneling microscopy study of the possible topological surface states in BiTeCl

Scanning Tunneling Microscopy of Gate Tunable Topological Insulator Bi2Se3 Thin Films

In Situ Raman Spectroscopy of Topological Insulator Bi2Te3 Films with Varying Thickness

Electronic structures of topological insulator Bi2Te3 surfaces with non-conventional terminations

Landau Quantization and the Thickness Limit of Topological Insulator Thin Films Ofsb2te3

Atomically smooth ultrathin films of topological insulator Sb 2 Te 3

Probing Dirac Fermion Dynamics in Topological Insulator Bi2Se3 Films with a Scanning Tunneling Microscope.

Landau Quantization of Topological Surface States Inbi2se3

Atomistic Control in Molecular Beam Epitaxy Growth of Intrinsic Magnetic Topological Insulator MnBi2Te4

Electric-Field Tuning Of The Surface Band Structure Of Topological Insulator Sb2te3 Thin Films

Gating the Charge State of Single Fe Dopants in the Topological Insulator Bi 2 Se 3 with a Scanning Tunneling Microscope

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Intrinsic Ultrathin Topological Insulators Grown via MBE Characterized by in-situ Angle Resolved Photoemission Spectroscopy

Experimental Demonstration of Topological Surface States Protected by Time-Reversal Symmetry.

Direct observation of quantum confinement of massless Dirac fermions in a topological insulator

Quasiparticle scattering from topological crystalline insulator SnTe (001) surface states