Abstract:Topological insulators (TIs) have become one of the intensely pursed topics during the past few years due to their robust gapless edge states, among which bismuth (Bi) enjoys a good reputation because of its rich quantum states. However, bulk Bi itself is topologically trivial. While thin Bi film has long been theoretically perceived to be a two-dimensional topological insulator, it still remains a challenge to construct free-standing Bi(111) film experimentally. Herein, we investigate the epitaxial growth of bismuth films on graphene with the film facet ranging from (110) to (111) with increasing coverage and demonstrate the topologically nontrivial property embedded in Bi(111) layers by angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations. In contrast to the bulk Bi with semimetallicity, a metallic surface state is revealed in the 7-bilayer Bi(111) with a circle-shape photoemission intensity plot, while the stacking of free-standing bismuth bilayers on graphene is rationalized to be responsible for the nontrivial characteristics of Bi(111) with an odd crossing of the Fermi level. Our report herein proposes an intriguing approach toward fabricating topologically nontrivial bismuth film, as well as advancing the fundamental understanding of Bi(111) bilayers. Importantly, the combination of the nontrivial Bi(111) film and graphene might also shed useful insights into the development of nanotronics and spintronics.

Stable nontrivial Z2 topology in ultrathin Bi (111) films: a first-principles study

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Topological Properties Determined by Atomic Buckling in Self-Assembled Ultrathin Bi(110)

Topological Limit of Ultrathin Quasi-Free-standing Bi2Te3films Grown on Si(111)

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

The emergence of topologically protected surface states in epitaxial Bi(111) thin films

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Topologically Nontrivial Bismuth(111) Thin Films Grown on Bi2Te3

A new kind of 2D topological insulators BiCN with a giant gap and its substrate effects

Tunable topological edge states in black phosphorus-like Bi(110)

Quasi-One-Dimensional Higher-Order Topological Insulators

Room-Temperature Topological Phase Transition in Quasi-One-Dimensional Material Bi_4I_4

Sierpiński Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces

Nontrivial Z(2) Topology in Bismuth-Based Iii-V Compounds

Topological phases of topological insulator thin films

A computational investigation of topological insulator Bi2Se3 film

Electronic and topological properties of Bi(110) ultrathin films grown on a Cu(111) substrate

Band Structure Engineering in (Bi(1-X)sb(x))(2)te(3) Ternary Topological Insulators.

Electronic and Topological Transitions in Sb (111) Thin Films

2D and 3D topological phases in BiTe$X$ compounds

Two-dimensional rectangular bismuth bilayer: A novel dual topological insulator