Abstract:Bi is a key semimetallic element with strong spin-orbit coupling characteristics, long Fermi wavelengths, quantum size effects, and competitive structural phases. Its spin-orbit coupling can induce the metal surface state of Bi thin film, which is completely different from its bulk properties, indicating that thin Bi film has important research significance in the control of the transmission performance of semiconductor sensors. The biaxial strain deformation and film thickness can induce the transition from semiconductors to semimetals and changes in topological properties. However, the current critical transition thickness obtained using different methods is contentious, and the inherent transition mechanism remains unclear. In this work, the effect and affecting mechanism of biaxial strain on the geometric and band structures of Bi thin films with different thicknesses of Bi thin films were systematically studied and discussed using a first-principles method based on density functional theories. The results show that the band and geometric structures of Bi(111) films are strongly correlated to the thickness. With the increase in the number of atomic layers, the lattice constant increases, the buckling height decreases, the surface energy increases, and the energy bandgap decreases, where a transition of the films from semiconductor to semimetal occurs at the critical thickness of three bilayers (BLs). The application of tensile strain to the one-BL Bi film can induce the transition of energy bandgap from indirect to direct semiconductor accompanied with a band inversion, whereas the compressive strain can induce the transition from semiconductor to semimetal. The analysis of the bond nature of the near-band-edge electronic orbitals revealed that the transition of the semiconductor to the semimetallic state originates from the transition of the conduction band minimum induced by the different response rates of the bonding and antibonding states of the band edge electrons to the strain. A similar transition can be observed for 2-5 Bi BL films under biaxial deformation. The strain deformation can also improve the transport property of Bi films by changing the effective mass of electrons and holes. These findings provide a theoretical insight to regulating the electronic properties of Bi film integrated electronic devices using the strain field.

Sierpiński Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Topological Limit of Ultrathin Quasi-Free-standing Bi2Te3films Grown on Si(111)

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Composition-dependent structural transition in epitaxial thin films on Si(111)

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Engineering Electronic Structure of a Two Dimensional Topological Insulator Bi(111) Bilayer on Sb Nanofilms by Quantum Confinement Effect

Molecular Beam Epitaxy of Bilayer Bi(111) Films on Topological Insulator Bi2te3: A Scanning Tunneling Microscopy Study

Engineering electronic structure of a 2D topological insulator Bi(111) bilayer on Sb nanofilms by quantum confinement effect

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Epitaxial Fabrication of Topological Bi-Sb Alloy Films by Surface Alloying of Sb Nanofilms

Resolving The One-Dimensional Singularity Edge States Of Bi(111) Thin Films

Stable nontrivial Z2 topology in ultrathin Bi (111) films: a first-principles study

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Topologically Nontrivial Bismuth(111) Thin Films Grown on Bi2Te3

The emergence of topologically protected surface states in epitaxial Bi(111) thin films

Effect of Thickness on the Surface and Electronic Properties of Bi Film

Strain-Engineered Semiconductor to Semimetallic Transition and Its Mechanism in Bi(111)Film

Topological Properties Determined by Atomic Buckling in Self-Assembled Ultrathin Bi(110)