Abstract:Topological insulators (TIs) have become one of the intensely pursed topics during the past few years due to their robust gapless edge states, among which bismuth (Bi) enjoys a good reputation because of its rich quantum states. However, bulk Bi itself is topologically trivial. While thin Bi film has long been theoretically perceived to be a two-dimensional topological insulator, it still remains a challenge to construct free-standing Bi(111) film experimentally. Herein, we investigate the epitaxial growth of bismuth films on graphene with the film facet ranging from (110) to (111) with increasing coverage and demonstrate the topologically nontrivial property embedded in Bi(111) layers by angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations. In contrast to the bulk Bi with semimetallicity, a metallic surface state is revealed in the 7-bilayer Bi(111) with a circle-shape photoemission intensity plot, while the stacking of free-standing bismuth bilayers on graphene is rationalized to be responsible for the nontrivial characteristics of Bi(111) with an odd crossing of the Fermi level. Our report herein proposes an intriguing approach toward fabricating topologically nontrivial bismuth film, as well as advancing the fundamental understanding of Bi(111) bilayers. Importantly, the combination of the nontrivial Bi(111) film and graphene might also shed useful insights into the development of nanotronics and spintronics.

The emergence of topologically protected surface states in epitaxial Bi(111) thin films

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Interfacial protection of topological surface states in ultrathin Sb films.

Topological Limit of Ultrathin Quasi-Free-Standing Bi2te3 Films Grown on Si(111)

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Stable nontrivial Z2 topology in ultrathin Bi (111) films: a first-principles study

Evolution of Topological Surface States in Antimony Ultra-Thin Films

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Electronic and topological properties of Bi(110) ultrathin films grown on a Cu(111) substrate

Topologically Nontrivial Bismuth(111) Thin Films Grown on Bi2Te3

Spatial and Energy Distribution of Topological Edge States in Single Bi(111) Bilayer.

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Surface States On A Topologically Nontrivial Semimetal: The Case Of Sb(110)

Topological States Modulation of Bi and Sb Thin Films by Atomic Adsorption

Topological and Electronic Transitions in a Sb(111) Nanofilm: the Interplay Between Quantum Confinement and Surface Effect

Manifestation of Topological Protection in Transport Properties of Epitaxial Bi2Se3 Thin Films

Molecular Beam Epitaxy of Bilayer Bi(111) Films on Topological Insulator Bi2te3: A Scanning Tunneling Microscopy Study

Bi(111) Thin Film with Insulating Interior but Metallic Surfaces.

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Electronic and Topological Transitions in Sb (111) Thin Films