Abstract:We investigate the electronic, structural and topological properties of the SnTe and PbTe cubic nanowires using ab-initio calculations. Using standard and linear-scale density functional theory, we go from the ultrathin limit up to the nanowires thicknesses observed experimentally. Finite-size effects in the ultra-thin limit produce an electric quadrupole and associated structural distortions, these distortions increase the band gap but they get reduced with the size of the nanowires and become less and less relevant. Ultrathin SnTe cubic nanowires are trivial band gap insulators, we demonstrate that by increasing the thickness there is an electronic transition to a spin-orbit insulating phase due to trivial surface states in the regime of thin nanowires. These trivial surface states with a spin-orbit gap of a few meV appear at the same k-point of the topological surface states. Going to the limit of thick nanowires, we should observe the transition to the topological crystalline insulating phase with the presence of two massive surface Dirac fermions hybridized with the persisting trivial surface states. Therefore, we have the co-presence of massive Dirac surface states and trivial surface states close to the Fermi level in the same region of the k-space. According to our estimation, the cubic SnTe nanowires are trivial insulators below the critical thickness tc1=10 nm, and they become spin-orbit insulators between tc1=10 nm and tc2=17 nm, while they transit to the topological phase above the critical thickness of tc2=17 nm. These critical thickness values are in the range of the typical experimental thicknesses, making the thickness a relevant parameter for the synthesis of topological cubic nanowires. Pb(1-x)Sn(x)Te nanowires would have both these critical thicknesses tc1 and tc2 at larger values depending on the doping concentration.

Topological and Electronic Transitions in a Sb(111) Nanofilm: the Interplay Between Quantum Confinement and Surface Effect

Electronic and Topological Transitions in Sb (111) Thin Films

Interfacial protection of topological surface states in ultrathin Sb films.

Surface States On A Topologically Nontrivial Semimetal: The Case Of Sb(110)

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Topological Limit of Ultrathin Quasi-Free-standing Bi2Te3films Grown on Si(111)

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

The emergence of topologically protected surface states in epitaxial Bi(111) thin films

Tunable topological electronic structures in Sb(111) bilayers: A first-principles study

Topological States Modulation of Bi and Sb Thin Films by Atomic Adsorption

First-principles study of the topological surface states of -Sn(111)

Experimental Evidence of the Thickness- and Electric-Field-dependent Topological Phase Transitions in Topological Crystalline Insulator SnTe(111) Thin Films

Interfacial-state coupling induced topological phase transitions in SnTe (110) thin film

Experimental Observation of Dirac-like Surface States and Topological Phase Transition in Films

Experimental Observation of Dirac-like Surface States and Topological Phase Transition in Pb(1-x)Sn(x)Te(111) Films.

Evolution of Topological Surface States in Antimony Ultra-Thin Films

Quantum Spin-Quantum Anomalous Hall Insulators And Topological Transitions In Functionalized Sb(111) Monolayers

Quantum Size Effects Induced Novel Properties in Two-Dimensional Electronic Systems: Pb Thin Films on Si(111)

Observations of a metal-insulator transition and strong surface states in Bi2-x SbxSe3 thin films.

Spin-orbit insulating phase in SnTe cubic nanowires: consequences on the topological surface states

Quantum-Hall to Insulator Transition in Ultra-low-carrier-density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level