Abstract:We have investigated the structures and electronic properties of ultra-thin Bi(110) films grown on an s-wave superconductor substrate using low-temperature scanning tunneling microscopy and spectroscopy. Remarkably, our experimental results validate the theoretical predictions that the manipulation of Bi(110) surface atom buckling can control the topological phase transition. Notably, we have observed robust unreconstructed edge states at the edges of both 3-bilayer (BL) and 4-BL Bi(110) films, with the 4-BL film displaying stronger edge state intensity and a smaller degree of atomic buckling. First-principle calculations further substantiate these findings, demonstrating a gradual reduction in buckling as the film thickness increases, with average height differences between two Bi atoms of approximately 0.19 Å, 0.10 Å, 0.05 Å, and 0.00 Å for the 1-BL, 2-BL, 3-BL, and 4-BL Bi(110) films, respectively. When Bi films are larger than 2 layers, the system changes from a trivial to a non-trivial phase. This research sets the stage for the controlled realization of topological superconductors through the superconducting proximity effect, providing a significant platform for investigating Majorana zero modes and fabricating quantum devices.

Electronic and Topological Transitions in Sb (111) Thin Films

Topological and Electronic Transitions in a Sb(111) Nanofilm: the Interplay Between Quantum Confinement and Surface Effect

Tunable topological electronic structures in Sb(111) bilayers: A first-principles study

Interfacial protection of topological surface states in ultrathin Sb films.

Surface States On A Topologically Nontrivial Semimetal: The Case Of Sb(110)

Topological Limit of Ultrathin Quasi-Free-Standing Bi2te3 Films Grown on Si(111)

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Experimental Evidence of the Thickness- and Electric-Field-dependent Topological Phase Transitions in Topological Crystalline Insulator SnTe(111) Thin Films

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Topological States Modulation of Bi and Sb Thin Films by Atomic Adsorption

The emergence of topologically protected surface states in epitaxial Bi(111) thin films

Quantum Spin-Quantum Anomalous Hall Insulators And Topological Transitions In Functionalized Sb(111) Monolayers

Evolution of Topological Surface States in Antimony Ultra-Thin Films

First-principles study of the topological surface states of -Sn(111)

Observations of a metal-insulator transition and strong surface states in Bi2-x SbxSe3 thin films.

Experimental Observation of Dirac-like Surface States and Topological Phase Transition in Pb(1-x)Sn(x)Te(111) Films.

Interfacial-state coupling induced topological phase transitions in SnTe (110) thin film

Quantum Size Effects Induced Novel Properties in Two-Dimensional Electronic Systems: Pb Thin Films on Si(111)

Experimental Observation of Dirac-like Surface States and Topological Phase Transition in Films

Stable nontrivial Z2 topology in ultrathin Bi (111) films: a first-principles study

Tunable topological edge states in black phosphorus-like Bi(110)