Abstract:Despite recent advances of layered square-net topological material models that possess ideal semimetallic electronic structures and promising potential in material applications, the identification of experimentally accessible two-dimensional square-net materials with related topological properties has proven challenging. Due to the highly tunable physical and topological properties of III-V semiconductors, we revisit the class of III-V materials and observe that the litharge-phase InBi is a layered square-net material and can be exfoliated into the InBi monolayer. We present a comprehensive first-principles study of the energy landscape of the InBi monolayer. We identify a paraelastic phase and three ferroelastic phases and study their topological properties. Specifically, we show that the paraelastic InBi monolayer is a trivial insulator due to the orbital-ordering-induced band inversion occurring between states with the same parity. Substituting one Bi atom per cell with another V-group element (N, P, As) or applying an electric field that breaks the inversion symmetry and changes the orbital onsite energy, the paraelastic InBi monolayer can be driven into the topological insulator phase. Furthermore, one of the ferroelastic phases of pure InBi, which can be obtained by gently straining the paraelastic phase, also possesses such topological insulating properties. These results provide several experimentally accessible routes to tune the nontrivial topology in the InBi monolayer, including creating heterostructures with piezoelectric or ferroelectric substrates and applying mechanical strain, making the InBi monolayer an ideal platform to study the interplay of reduced dimensionality, square-net chemical bonding networks, and band topology.

Nontrivial Z(2) Topology in Bismuth-Based Iii-V Compounds

Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys

Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb$_2$Te$_3$/Bi$_2$Te$_3$ Heterojunctions

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Higher-Order Topology in Bismuth

Controllable Topological Insulator Phases in Litharge-phase InBi Monolayer

Topological nature and the multiple Dirac cones hidden in Bismuth high-Tc superconductors

Topological Insulating Phases in Two-Dimensional Bismuth-Containing Single Layers Preserved by Hydrogenation

Exotic Topological Insulator States and Topological Phase Transitions in Sb2se3-Bi2se3 Heterostructures

A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111)

Topological Phase Transition in Quasi-One-Dimensional Bismuth Iodide Bi4I4

Topological Insulators in Hexagonal Wurtzite-type Binary Compounds

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Stable nontrivial Z2 topology in ultrathin Bi (111) films: a first-principles study

Spin-Orbit-Coupling-Induced Topological Transition and Anomalously Strong Intervalley Scattering in Two-Dimensional Bismuth Allotropes with Enhanced Thermoelectric Performances

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Three-Dimensional Topological Insulators in I-III-VI$_2$ and II-IV-V$_2$ Chalcopyrite Semiconductors

Carrier-driven magnetic and topological phase transitions in two-dimensional III–V semiconductors

Quasi-1D topological insulators