Quasi-1D topological insulators

Huaqing Huang,Wenhui Duan

DOI: https://doi.org/10.1038/nmat4543

IF: 41.2

2016-01-01

Nature Materials

Abstract:Bismuth iodide Bi 4 I 4 , composed of quasi-one-dimensional molecular chains, was theoretically predicted and now has been experimentally verified to be a novel strong topological insulator.

What problem does this paper attempt to address?

Room-Temperature Topological Phase Transition in Quasi-One-Dimensional Material Bi_4I_4

Jianwei Huang,Sheng Li,Chiho Yoon,Ji Seop Oh,Han Wu,Xiaoyuan Liu,Nikhil Dhale,Yan-Feng Zhou,Yucheng Guo,Yichen Zhang,Makoto Hashimoto,Donghui Lu,Jonathan Denlinger,Xiqu Wang,Chun Ning Lau,Robert J. Birgeneau,Fan Zhang,Bing Lv,Ming Yi

DOI: https://doi.org/10.1103/physrevx.11.031042

2021-01-01

Physical Review X

Abstract:Quasi-one-dimensional (1D) materials provide a superior platform for characterizing and tuning topological phases for two reasons: (i) existence for multiple cleavable surfaces that enables better experimental identification of topological classification and (ii) stronger response to perturbations such as strain for tuning topological phases compared to higher dimensional crystal structures. In this paper, we present experimental evidence for a room-temperature topological phase transition in the quasi-1D material Bi4I4, mediated via a first-order structural transition between two distinct stacking orders of the weakly coupled chains. Using high-resolution angle-resolved photoemission spectroscopy on the two natural cleavable surfaces, we identify the high-temperature beta phase to be the first weak topological insulator with two gapless Dirac cones on the (100) surface and no Dirac crossing on the (001) surface, while in the low-temperature a phase, the topological surface state on the (100) surface opens a gap, consistent with a recent theoretical prediction of a higher-order topological insulator beyond the scope of the established topological materials databases that hosts gapless hinge states. Our results not only identify a rare topological phase transition between first-order and second-order topological insulators but also establish a novel quasi-1D material platform for exploring unprecedented physics.
Topological Phase Transition in Quasi-One-Dimensional Bismuth Iodide Bi4I4

W. X. Zhao,M. Yang,X. Du,Y. D. Li,K. Y. Zhai,Y. Q. Hu,J. F. Han,Y. Huang,Z. K. Liu,Y. G. Yao,J. C. Zhuang,Y. Du,J. J. Zhou,Y. L. Chen,L. X. Yang

2024-07-28

Abstract:The exploration of topological quantum materials and topological phase transitions is at the forefront of modern condensed matter physics. Quasi-one-dimensional (quasi-1D) bismuth iodide Bi4I4 exhibits versatile topological phases of matter including weak topological insulator (WTI) and higher-order topological insulator (HOTI) phases with high tunability in response to external parameters. In this work, performing laser-based angle-resolved photoemission spectroscopy with submicron spatial resolution (micro-ARPES), we comprehensively investigate the fine electronic structure and topological phase transition of Bi4I4. Our examination of the low-temperature {\alpha}-phase reveals the presence of an energy gap on the (100) surface, providing spectroscopic evidence for the HOTI phase. Conversely, the high-temperature {\beta}-Bi4I4 harbors a gapless Dirac fermion on the (100) surface alongside gapped states on the (001) surface, thereby establishing a WTI phase. By tracking the temperature evolution of the (100) surface states, we unveil a thermal hysteresis of the surface gap in line with the {\alpha}-{\beta} structural phase transition. Our findings elucidate the topological properties of Bi4I4 and directly evidence a temperature-induced topological phase transition from WTI to HOTI, which paves the way to potential applications based on the room-temperature topological phase transition in the quasi-1D topological quantum material.

Materials Science,Mesoscale and Nanoscale Physics
Nontrivial Z(2) Topology in Bismuth-Based Iii-V Compounds

Huaqing Huang,Jianpeng Liu,Wenhui Duan

DOI: https://doi.org/10.1103/physrevb.90.195105

2014-01-01

Abstract:Realizing topological insulators in commonly used III-V semiconductors is of great importance for their potential application in spintronics and quantum computing. Here we propose a general strategy to realize topological insulators in conventional III-V semiconductors by bismuth substitution and external strain. Based on first-principles calculations, we identify that AlBi (GaBi and InBi) become topological insulators (semimetals) under proper external strain by directly calculating Z(2) invariants and surface states. Furthermore, we demonstrate that a topological phase transition can be induced by Bi substitution in common III-V semiconductors like GaAs. These proposed topological insulators can be easily integrated into various semiconductor electronic devices and modulated by well-developed modern semiconductor technologies.
Quasi-One-Dimensional Higher-Order Topological Insulators

Chiho Yoon,Cheng-Cheng Liu,Hongki Min,Fan Zhang

DOI: https://doi.org/10.48550/arXiv.2005.14710

2020-05-29

Mesoscale and Nanoscale Physics

Abstract:Quasi-1D materials Bi$_{4}$X$_{4}$ (X=Br,I) are prototype weak topological insulators (TI) in the $\beta$ phase. For the $\alpha$ phases, recent high-throughput database screening suggests that Bi$_{4}$Br$_{4}$ is a rare higher-order TI (HOTI) whereas Bi$_{4}$I$_{4}$ has trivial symmetry indicators. Here we show that in fact the two $\alpha$ phases are both pristine HOTIs yet with distinct termination-dependent hinge state patterns by performing first-principles calculations, analyzing coupled-edge dimerizations, inspecting surface lattice structures, constructing tight-binding models, and establishing boundary topological invariants. We reveal that the location of inversion center dictates Bi$_{4}$Br$_{4}$ (Bi$_{4}$I$_{4}$) to feature opposite (the same) dimerizations of a surface or intrinsic (bulk or extrinsic) origin at two side cleavage surfaces. We propose a variety of experiments to examine our predictions. Given the superior hinges along atomic chains, the structural transition at room temperature, and the extreme anisotropies in three axes, our results not only imply the possible existence of many topological materials beyond the scope of symmetry indicators but also establish a new TI paradigm and a unique material platform for exploring the interplay of geometry, symmetry, topology, and interaction.
Ideal Weak Topological Insulator and Protected Helical Saddle Points

Ji Seop Oh,Tianyi Xu,Nikhil Dhale,Sheng Li,Chao Lei,Chiho Yoon,Wenhao Liu,Jianwei Huang,Hanlin Wu,Makoto Hashimoto,Donghui Lu,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Chun Ning Lau,Bing Lv,Fan Zhang,Robert J. Birgeneau,Ming Yi

DOI: https://doi.org/10.1103/physrevb.108.l201104

2023-01-01

Abstract:The paradigm of classifying three-dimensional (3D) topological insulators into strong and weak ones (STI and WTI) opens the door for the discovery of various topological phases of matter protected by different symmetries and defined in different dimensions. However, in contrast to the vast realization of STIs, very few materials have been experimentally identified as being close to WTI. Even amongst those identified, none exists with topological surface states (TSS) exposed in a global bulk band gap that is stable at all temperatures. Here we report the design and observation of an ideal WTI in a quasi-one-dimensional (quasi-1D) bismuth halide, Bi$_{4}$I$_{1.2}$Br$_{2.8}$ (BIB). Via angle-resolved photoemission spectroscopy (ARPES), we identify that BIB hosts TSS on the (100)$\prime$ side surface in the form of two anisotropic $\pi$-offset Dirac cones (DCs) separated in momentum while topologically dark on the (001) top surface. The ARPES data fully determine a unique side-surface Hamiltonian and thereby identify two pairs of non-degenerate helical saddle points and a series of four Lifshitz transitions. The fact that both the surface Dirac and saddle points are in the global bulk band gap of 195 meV, combined with the small Dirac velocities, nontrivial spin texture, and the near-gap chemical potential, qualifies BIB to be not only an ideal WTI but also a fertile ground for topological many-body physics.
Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Haijun Zhang,Chao-Xing Liu,Xiao-Liang Qi,Xi Dai,Zhong Fang,Shou-Cheng Zhang

DOI: https://doi.org/10.1038/nphys1270

IF: 19.684

2009-05-10

Nature Physics

Abstract:Topological insulators are new states of quantum matter in which surface states residing in the bulk insulating gap of such systems are protected by time-reversal symmetry. The study of such states was originally inspired by the robustness to scattering of conducting edge states in quantum Hall systems. Recently, such analogies have resulted in the discovery of topologically protected states in two-dimensional and three-dimensional band insulators with large spin–orbit coupling. So far, the only known three-dimensional topological insulator is BixSb1−x, which is an alloy with complex surface states. Here, we present the results of first-principles electronic structure calculations of the layered, stoichiometric crystals Sb2Te3, Sb2Se3, Bi2Te3 and Bi2Se3. Our calculations predict that Sb2Te3, Bi2Te3 and Bi2Se3 are topological insulators, whereas Sb2Se3 is not. These topological insulators have robust and simple surface states consisting of a single Dirac cone at the Γ point. In addition, we predict that Bi2Se3 has a topologically non-trivial energy gap of 0.3 eV, which is larger than the energy scale of room temperature. We further present a simple and unified continuum model that captures the salient topological features of this class of materials.

physics, multidisciplinary
Helical Metal Inside a Topological Band Insulator

Ying Ran,Yi Zhang,Ashvin Vishwanath

DOI: https://doi.org/10.1038/nphys1220

2008-01-01

Abstract:Topological defects, such as domain walls and vortices, have long fascinated physicists. A novel twist is added in quantum systems like the B-phase of superfluid helium He_3, where vortices are associated with low energy excitations in the cores. Similarly, cosmic strings may be tied to propagating fermion modes. Can analogous phenomena occur in crystalline solids that host a plethora of topological defects? Here we show that indeed dislocation lines are associated with one dimensional fermionic excitations in a `topological insulator', a novel band insulator believed to be realized in the bulk material Bi_0.9Sb_0.1. In contrast to fermionic excitations in a regular quantum wire, these modes are topologically protected like the helical edge states of the quantum spin-Hall insulator, and not scattered by disorder. Since dislocations are ubiquitous in real materials, these excitations could dominate spin and charge transport in topological insulators. Our results provide a novel route to creating a potentially ideal quantum wire in a bulk solid.
One-dimensional topologically protected modes in topological insulators with lattice dislocations

Ran, Ying,Zhang, Yi,Vishwanath, Ashvin

DOI: https://doi.org/10.1038/nphys1220

IF: 19.684

2009-01-01

Nature Physics

Abstract:Topological defects, such as domain walls and vortices, have long fascinated physicists. A novel twist is added in quantum systems such as the B-phase of superfluid helium He3, where vortices are associated with low-energy excitations in the cores. Similarly, cosmic strings may be tied to propagating fermion modes. Can analogous phenomena occur in crystalline solids that host a plethora of topological defects? Here, we show that indeed dislocation lines are associated with one-dimensional fermionic excitations in a ‘topological insulator’, a novel phase of matter believed to be realized in the material Bi0.9Sb0.1. In contrast to fermionic excitations in a regular quantum wire, these modes are topologically protected and not scattered by disorder. As dislocations are ubiquitous in real materials, these excitations could dominate spin and charge transport in topological insulators. Our results provide a novel route to creating a potentially ideal quantum wire in a bulk solid. Topological insulators are band insulators in which spin–orbit coupling takes the role of the applied magnetic field in the integer quantum Hall effect. Theory now predicts that dislocations in such systems can give rise to one-dimensional topologically protected states, resembling helical modes at the edge of a two-dimensional quantum spin Hall insulator.
Topological Insulator Materials

Yoichi Ando

DOI: https://doi.org/10.7566/JPSJ.82.102001

2013-09-03

Abstract:Topological insulators represent a new quantum state of matter which is characterized by peculiar edge or surface states that show up due to a topological character of the bulk wave functions. This review presents a pedagogical account on topological insulator materials with an emphasis on basic theory and materials properties. After presenting a historical perspective and basic theories of topological insulators, it discusses all the topological insulator materials discovered as of May 2013, with some illustrative descriptions of the developments in materials discoveries in which the author was involved. A summary is given for possible ways to confirm the topological nature in a candidate material. Various synthesis techniques as well as the defect chemistry that are important for realizing bulk-insulating samples are discussed. Characteristic properties of topological insulators are discussed with an emphasis on transport properties. In particular, the Dirac fermion physics and the resulting peculiar quantum oscillation patterns are discussed in detail. It is emphasized that proper analyses of quantum oscillations make it possible to unambiguously identify surface Dirac fermions through transport measurements. The prospects of topological insulator materials for elucidating novel quantum phenomena that await discovery conclude the review.

Materials Science,Mesoscale and Nanoscale Physics,Strongly Correlated Electrons,Superconductivity
Type-II Quadrupole Topological Insulators

Yan-Bin Yang,Kai Li,L-M Duan,Yong Xu

DOI: https://doi.org/10.1103/physrevresearch.2.033029

2020-01-01

Abstract:Modern theory of electric polarization is formulated by the Berry phase, which, when quantized, leads to topological phases of matter. Such a formulation has recently been extended to higher electric multipole moments, through the discovery of the so-called quadupole topological insulator. It has been established by a classical electromagnetic theory that in a two-dimensional material the quantized properties for the quadupole topological insulator should satisfy a basic relation. Here we discover a new type of quadrupole topological insulator (dubbed type-II) that violates this relation due to the breakdown of the correspondence that a Wannier band and an edge energy spectrum close their gaps simultaneously. We find that, similar to the previously discovered (referred to as type-I) quadrupole topological insulator, the type-II hosts topologically protected corner states carrying fractional corner charges. However, the edge polarizations only occur at a pair of boundaries in the type-II insulating phase, leading to the violation of the classical constraint. We demonstrate that such new topological phenomena can appear from quench dynamics in non-equilibrium systems, which can be experimentally observed in ultracold atomic gases. We also propose an experimental scheme with electric circuits to realize such a new topological phase of matter. The existence of the new topological insulating phase means that new multipole topological insulators with distinct properties can exist in broader contexts beyond classical constraints.
Topological Insulators in Hexagonal Wurtzite-type Binary Compounds

X. M. Zhang,R S. Ma,X. C. Liu,E. K. Liu,G. D. Liu,Z. Y. Liu,W. H. Wang,G. H. Wu

DOI: https://doi.org/10.48550/arXiv.1303.7040

2013-03-28

Materials Science

Abstract:We propose new topological insulators in hexagonal wurtzite-type binary compounds based on the first principles calculations. It is found that two compounds AgI and AuI are three-dimensional topological insulators with a naturally opened band-gap at Fermi level. From band inversion mechanism point view, this new family of topological insulators is similar with HgTe, which has s (Gamma 6) - p (Gamma 8) band inversion. Our results strongly support that the spin-orbit coupling is not an essential factor to the band inversion mechanism; on the contrary, it is mainly responsible to the formation of a global band gap for the studied topological insulators. We further theoretically explore the feasibility of tuning the topological order of the studied compounds with two types of strains. The results show that the uniaxial strain can contribute extremely drastic impacts to the band inversion behavior, which provide an effective approach to induce topological phase transition.
Room Temperature Quantum Spin Hall Insulators with a Buckled Square Lattice

Wei Luo,Hongjun Xiang

DOI: https://doi.org/10.1021/acs.nanolett.5b00418

IF: 10.8

2015-01-01

Nano Letters

Abstract:Two-dimensional (2D) topological insulators (TIs), also known as quantum spin Hall (QSH) insulators, are excellent candidates for coherent spin transport related applications because the edge states of 2D TIs are robust against nonmagnetic impurities since the only available backscattering channel is forbidden. Currently, most known 2D TIs are based on a hexagonal (specifically, honeycomb) lattice. Here, we propose that there exists the quantum spin Hall effect (QSHE) in a buckled square lattice. Through performing global structure optimization, we predict a new three-layer quasi-2D (Q2D) structure which has the lowest energy among all structures with the thickness less than 6.0 Å for the BiF system. It is identified to be a Q2D TI with a large band gap (0.69 eV). The electronic states of the Q2D BiF system near the Fermi level are mainly contributed by the middle Bi square lattice, which are sandwiched by two inert BiF2 layers. This is beneficial since the interaction between a substrate and the Q2D material may not change the topological properties of the system, as we demonstrate in the case of the NaF substrate. Finally, we come up with a new tight-binding model for a two-orbital system with the buckled square lattice to explain the low-energy physics of the Q2D BiF material. Our study not only predicts a QSH insulator for realistic room temperature applications, but also provides a new lattice system for engineering topological states such as quantum anomalous Hall effect.
Actinide Topological Insulator Materials with Strong Interaction

Xiao Zhang,Haijun Zhang,Jing Wang,Claudia Felser,Shou-Cheng Zhang

DOI: https://doi.org/10.1126/science.1216184

2013-01-01

Abstract:Topological band insulators have recently been discovered in spin-orbit coupled two-and three-dimensional systems. We theoretically predict a class of topological insulators where interaction effects play a dominant role. In actinide elements, simple rocksalt compounds formed by Pu and Am lie on the boundary between metals and insulators. We show that interaction drives a quantum phase transition to a topological insulator phase with a single Dirac cone on the surface. These putative topological insulators may provide a setting for both applied and fundamental investigation.
Topological Insulators from Group Cohomology

A. Alexandradinata,Zhijun Wang,B. Andrei Bernevig

DOI: https://doi.org/10.1103/PhysRevX.6.021008

2016-04-14

Abstract:We classify insulators by generalized symmetries that combine space-time transformations with quasimomentum translations. Our group-cohomological classification generalizes the nonsymmorphic space groups, which extend point groups by real-space translations, i.e., nonsymmorphic symmetries unavoidably translate the spatial origin by a fraction of the lattice period. Here, we further extend nonsymmorphic groups by reciprocal translations, thus placing real and quasimomentum space on equal footing. We propose that group cohomology provides a symmetry-based classification of quasimomentum manifolds, which in turn determines the band topology. In this sense, cohomology underlies band topology. Our claim is exemplified by the first theory of time-reversal-invariant insulators with nonsymmorphic spatial symmetries. These insulators may be described as 'piecewise topological', in the sense that subtopologies describe the different high-symmetry submanifolds of the Brillouin zone, and the various subtopologies must be pieced together to form a globally consistent topology. The subtopologies that we discovered include: a glide-symmetric analog of the quantum spin Hall effect, an hourglass-flow topology (exemplified by our recently-proposed KHgSb material class), and quantized non-Abelian polarizations. Our cohomological classification results in an atypical bulk-boundary correspondence for our topological insulators.

Mesoscale and Nanoscale Physics,Materials Science
Topological nature and the multiple Dirac cones hidden in Bismuth high-Tc superconductors

Gang Li,Binghai Yan,Ronny Thomale,Werner Hanke

DOI: https://doi.org/10.1038/srep10435

2015-05-27

Abstract:Recent theoretical studies employing density-functional theory have predicted BaBiO$_{3}$ (when doped with electrons) and YBiO$_{3}$ to become a topological insulator (TI) with a large topological gap (~ 0.7 eV). This, together with the natural stability against surface oxidation, makes the Bismuth-Oxide family of special interest for possible applications in quantum information and spintronics. The central question, we study here, is whether the hole-doped Bismuth Oxides, i.e. Ba$_{1-x}$K$_{x}$BiO$_{3}$ and BaPb$_{1-x}$Bi$_{x}$O$_{3}$, which are "high-Tc" bulk superconducting near 30 K, additionally display in the further vicinity of their Fermi energy $E_{F}$ a topological gap with a Dirac-type of topological surface state. Our electronic structure calculations predict the K-doped family to emerge as a TI, with a topological gap above $E_{F}$. Thus, these compounds can become superconductors with hole-doping and potential TIs with additional electron doping. Furthermore, we predict the Bismuth-Oxide family to contain an additional Dirac cone below $E_{F}$ for further hole doping, which manifests these systems to be candidates for both electron- and hole-doped topological insulators.

Materials Science,Superconductivity
Three-dimensional topological insulators in the octahedron-decorated cubic lattice

Jing-Min Hou,Wen-Xin Zhang,Guo-Xiang Wang

DOI: https://doi.org/10.1103/PhysRevB.84.075105

2011-01-19

Abstract:We investigate a tight-binding model of the octahedron-decorated cubic lattice with spin-orbit coupling. We calculate the band structure of the lattice and evaluate the Z_2 topological indices. According to the Z_2 topological indices and the band structure, we present the phase diagrams of the lattice with different filling fractions. We find that the $(1;111)$ and $(1;000)$ strong topological insulators occur in some range of parameters at 1/6, 1/2 and 2/3 filling fractions. Additionally, the $(0;111)$ weak topological insulator is found at 1/6 and 2/3 filing fractions. We analyze and discuss the characteristics of these topological insulators and their surfaces states.

Strongly Correlated Electrons,Other Condensed Matter
Novel Topological Insulators with Hybrid-order Boundary States

Yan-Qing Zhu,Zhen Zheng,Giandomenico Palumbo,Z. D. Wang

2024-05-27

Abstract:We report the discovery of several classes of novel topological insulators (TIs) with hybrid-order boundary states generated from the first-order TIs with additional crystalline symmetries. Unlike the current studies on hybrid-order TIs where different-order topology arises from merging different-order TIs in various energy, these novel TIs exhibit a remarkable coexsitence of first-order gapless modes and higher-order Fermi-arc states, behaving as a hybrid between the first-order TIs and higher-order topological semimetals within a single bulk gap. Our findings establish a profound connection between these novel $d$-dimensional ($d$D) TIs and ($d-1$)D higher-order TIs (HOTIs), which can be understood as a result of stacking $(d-1)$D HOTIs to $d$D with $d=3,4$, revealing unconventional topological phase transitions by closing the gap in certain first-order boundaries rather than the bulk. The bulk-boundary correspondence between these higher-order Fermi-arcs and bulk topological invariants acossiated with additional crystallline symmetries is also demonstrated. We then discuss the conventional topological phase transitions from these novel TIs to nodal-line/nodal-surface semimetal phases, where the gapless phases host new kinds of topological responses. Meawhile, we present the corresponding topological semimetal phases by stacking these unique TIs. Finally, we discuss potential ways to realize these novel phases in synthetic and real materials, with a particular focus on the feasible implementation in optical lattices using ultracold atoms.

Mesoscale and Nanoscale Physics,Quantum Gases
Quasiperiodic Quadrupole Insulators

Raul Liquito,Miguel Gonçalves,Eduardo V. Castro

2024-06-27

Abstract:Higher-order topological insulators are an intriguing new family of topological states that host lower-dimensional boundary states. Concurrently, quasiperiodic systems have garnered significant interest due to their complex localization and topological properties. In this work we study the impact of quasiperiodic modulations on the paradigmatic Benalcazar-Bernevig-Hughes model, which hosts topological insulating phases with zero-energy corner modes. We find that the topological properties are not only robust to the quasiperiodic modulation, but can even be enriched. In particular, we unveil the first instance of a quasiperiodic induced second-order topological insulating phase. Furthermore, in contrast with disorder, we find that quasiperiodic modulations can induce multiple reentrant topological transitions, showing an intricate sequence of localization properties. Our results open a promising avenue for exploring the rich interplay between higher-order topology and quasiperiodicity.

Mesoscale and Nanoscale Physics,Disordered Systems and Neural Networks
Discovery of a Single Topological Dirac Fermion in the Strong Inversion Asymmetric Compound BiTeCl

Y. L. Chen,M. Kanou,Z. K. Liu,H. J. Zhang,J. A. Sobota,D. Leuenberger,S. K. Mo,B. Zhou,S-L. Yang,P. S. Kirchmann,D. H. Lu,R. G. Moore,Z. Hussain,Z. X. Shen,X. L. Qi,T. Sasagawa

DOI: https://doi.org/10.1038/nphys2768

IF: 19.684

2013-01-01

Nature Physics

Abstract:BiTeCl is a topological insulator with strong inversion asymmetry, which exhibits bulk charge polarization and pyroelectricity. Such a long-sought topological insulator paves the way for applications involving natural p–n junctions and spintronics. In the past few years, a new state of quantum matter known as the time-reversal-invariant topological insulator has been predicted theoretically and realized experimentally. All of the topological insulators discovered so far in experiment are inversion symmetric1,2,3,4,5—except for strained HgTe, which has weak inversion asymmetry, a small bulk gap but no bulk charge polarization6. Strong inversion asymmetry in topological insulators would not only lead to many interesting phenomena, such as crystalline-surface-dependent topological electronic states, pyroelectricity and intrinsic topological p–n junctions, but would also serve as an ideal platform for the realization of topological magneto-electric effects7,8, which result from the modification of Maxwell equations in topological insulators. Here we report the discovery of a strong inversion asymmetric topological insulator phase in BiTeCl by angle-resolved photoemission spectroscopy, which reveals Dirac surface states and crystalline-surface-dependent electronic structures. Moreover, we observe a tenfold increase of the bulk energy gap in BiTeCl over the weak inversion asymmetric topological insulator HgTe, making it a promising platform for topological phenomena and possible applications at high temperature.
Topological Bose-Mott Insulators in a One-Dimensional Optical Superlattice

Shi-Liang Zhu,Z. -D. Wang,Y. -H. Chan,L. -M. Duan

DOI: https://doi.org/10.1103/physrevlett.110.075303

2014-01-01

Abstract:We study topological properties of the Bose-Hubbard model with repulsive interactions in a one-dimensional optical superlattice. We find that the Mott insulator states of the single-component (two-component) Bose-Hubbard model under fractional fillings are topological insulators characterized by a nonzero charge (or spin) Chern number with nontrivial edge states. For ultracold atomic experiments, we show that the topological Chern number can be detected through measuring the density profiles of the bosonic atoms in a harmonic trap.

Quasi-1D topological insulators

Room-Temperature Topological Phase Transition in Quasi-One-Dimensional Material Bi_4I_4

Topological Phase Transition in Quasi-One-Dimensional Bismuth Iodide Bi4I4

Nontrivial Z(2) Topology in Bismuth-Based Iii-V Compounds

Quasi-One-Dimensional Higher-Order Topological Insulators

Ideal Weak Topological Insulator and Protected Helical Saddle Points

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Helical Metal Inside a Topological Band Insulator

One-dimensional topologically protected modes in topological insulators with lattice dislocations

Topological Insulator Materials

Type-II Quadrupole Topological Insulators

Topological Insulators in Hexagonal Wurtzite-type Binary Compounds

Room Temperature Quantum Spin Hall Insulators with a Buckled Square Lattice

Actinide Topological Insulator Materials with Strong Interaction

Topological Insulators from Group Cohomology

Topological nature and the multiple Dirac cones hidden in Bismuth high-Tc superconductors

Three-dimensional topological insulators in the octahedron-decorated cubic lattice

Novel Topological Insulators with Hybrid-order Boundary States

Quasiperiodic Quadrupole Insulators

Discovery of a Single Topological Dirac Fermion in the Strong Inversion Asymmetric Compound BiTeCl

Topological Bose-Mott Insulators in a One-Dimensional Optical Superlattice