Abstract:Quantum spin Hall (QSH) materials promise revolutionary device applications based on dissipationless propagation of spin currents. They are two-dimensional (2D) representatives of the family of topological insulators, which exhibit conduction channels at their edges inherently protected against scattering. Initially predicted for graphene, and eventually realized in HgTe quantum wells, in the QSH systems realized so far, the decisive bottleneck preventing applications is the small bulk energy gap of less than 30 meV, requiring cryogenic operation temperatures in order to suppress detrimental bulk contributions to the edge conductance. Room-temperature functionalities, however, require much larger gaps. Here we show how this can be achieved by making use of a new QSH paradigm based on substrate-supported atomic monolayers of a high-Z element. Experimentally, the material is synthesized as honeycomb lattice of bismuth atoms, forming "bismuthene", on top of the wide-gap substrate SiC(0001). Consistent with the theoretical expectations, the spectroscopic signatures in experiment display a huge gap of ~0.8 eV in bismuthene, as well as conductive edge states. The analysis of the layer-substrate orbitals arrives at a QSH phase, whose topological gap - as a hallmark mechanism - is driven directly by the atomic spin-orbit coupling (SOC). Our results demonstrate how strained artificial lattices of heavy atoms, in contact with an insulating substrate, can be utilized to evoke a novel topological wide-gap scenario, where the chemical potential is located well within the global system gap, ensuring pure edge state conductance. We anticipate future experiments on topological signatures, such as transport measurements that probe the QSH effect via quantized universal conductance, notably at room temperature.

A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111)

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Structural and Electronic Properties of Atomically Thin Bismuth on Au(111)

Surface Alloy Engineering in 2D Trigonal Lattice: Giant Rashba Spin Splitting and Two Large Topological Gaps

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Binary Two-Dimensional Honeycomb Lattice with Strong Spin-Orbit Coupling and Electron-Hole Asymmetry.

Two-Dimensional Topological Insulator Al 2 SbBi with a Double-Layer Honeycomb Structure with Large Spin Splitting and Piezoelectricity for Spintronic Devices

Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material

Nontrivial Z(2) Topology in Bismuth-Based Iii-V Compounds

Hybridization gap approaching the two-dimensional limit of topological insulator Bi$_x$Sb$_{1-x}$

Symmetry-Constrained Reorganization Of Dirac Cones In Topological Insulators By Surface Modification

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Surface Landau levels and spin states in bismuth (111) ultrathin films

Searching for Large-gap Quantum Spin Hall Insulators: Boron-Nitride/(Pb, Sn)/α-Al2O3 Sandwich Structures

Large spin splitting and piezoelectricity in a two-dimensional topological insulator Al$_2$SbBi with double-layer honeycomb structure

Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface

Realizing a Superconducting Square-Lattice Bismuth Monolayer

Topological Insulating Phases in Two-Dimensional Bismuth-Containing Single Layers Preserved by Hydrogenation

Epitaxial Growth of Quasi-One-Dimensional Bismuth-Halide Chains with Topological Non-Trivial Edge States

Chemically induced large-gap quantum anomalous Hall insulator states in III-Bi honeycombs

Bismuthene on a SiC Substrate: A Candidate for a New High-Temperature Quantum Spin Hall Paradigm