Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material

F Reis,G Li,L Dudy,M Bauernfeind,S Glass,W Hanke,R Thomale,J Schäfer,R Claessen,F. Reis,G. Li,L. Dudy,M. Bauernfeind,S. Glass,W. Hanke,R. Thomale,J. Schäfer,R. Claessen
DOI: https://doi.org/10.1126/science.aai8142
IF: 56.9
2017-07-21
Science
Abstract:Making a large-gap topological insulator Although of interest to basic research, topological insulators (TIs) have not yet lived up to their technological potential. This is partly because their protected surface-edge state usually lives within a narrow energy gap, with its exotic transport properties overwhelmed by the ordinary bulk material. Reis et al. show that a judicious choice of materials can make the gap wide enough for the topological properties to be apparent at room temperature. Numerical calculations indicate that a monolayer of Bismuth grown on SiC(0001) is a two-dimensional TI with a large energy gap. The researchers fabricated such a heterostructure and characterized it using scanning tunneling spectroscopy. The size of the experimentally measured gap was consistent with the calculations. Science , this issue p. 287
multidisciplinary sciences
What problem does this paper attempt to address?