Abstract:Quantum spin Hall (QSH) materials promise revolutionary device applications based on dissipationless propagation of spin currents. They are two-dimensional (2D) representatives of the family of topological insulators, which exhibit conduction channels at their edges inherently protected against scattering. Initially predicted for graphene, and eventually realized in HgTe quantum wells, in the QSH systems realized so far, the decisive bottleneck preventing applications is the small bulk energy gap of less than 30 meV, requiring cryogenic operation temperatures in order to suppress detrimental bulk contributions to the edge conductance. Room-temperature functionalities, however, require much larger gaps. Here we show how this can be achieved by making use of a new QSH paradigm based on substrate-supported atomic monolayers of a high-Z element. Experimentally, the material is synthesized as honeycomb lattice of bismuth atoms, forming "bismuthene", on top of the wide-gap substrate SiC(0001). Consistent with the theoretical expectations, the spectroscopic signatures in experiment display a huge gap of ~0.8 eV in bismuthene, as well as conductive edge states. The analysis of the layer-substrate orbitals arrives at a QSH phase, whose topological gap - as a hallmark mechanism - is driven directly by the atomic spin-orbit coupling (SOC). Our results demonstrate how strained artificial lattices of heavy atoms, in contact with an insulating substrate, can be utilized to evoke a novel topological wide-gap scenario, where the chemical potential is located well within the global system gap, ensuring pure edge state conductance. We anticipate future experiments on topological signatures, such as transport measurements that probe the QSH effect via quantized universal conductance, notably at room temperature.

Robust large-gap quantum spin Hall states in stabilized bismuthene on Si(111)-α-√3×√3-Au

Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material

Dumbbell Silicene: A Strain-Induced Room Temperature Quantum Spin Hall Insulator

Bismuthene on a SiC Substrate: A Candidate for a New High-Temperature Quantum Spin Hall Paradigm

Epitaxial Growth of Ultraflat Bismuthene with Large Topological Band Inversion Enabled by Substrate-Orbital-Filtering Effect

Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface

Structural and Electronic Properties of Atomically Thin Bismuth on Au(111)

Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling

Time-Reversal Symmetry Protected Chiral Interface States Between Quantum Spin And Quantum Anomalous Hall Insulators

Robust Large Gap Quantum Spin Hall Insulators in Methyl-functionalized III-Bi Buckled Honeycombs

Large-gap quantum spin Hall state in functionalized dumbbell stanene

Interfacial protection of topological surface states in ultrathin Sb films.

Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Large-gap Quantum Spin Hall State on a Semiconductor Surface: the Orbital Filtering by Substrate

Surface reconstruction induced anisotropic energy landscape of bismuth monomers and dimers on the Si(001) surface

Large-gap Quantum Anomalous Hall States Induced by Functionalizing Buckled Bi-III Monolayer/al$_{2}$o$_{3}$

A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111)

Chemically induced large-gap quantum anomalous Hall insulator states in III-Bi honeycombs

Transport properties of Hall-type quantum states in disordered bismuthene

Scanning Tunneling Microscopy Observation of the Hinge States of Bismuth Nanocrystals