Abstract:We study the electronic surface states of the semiconducting alloy BiSb. Using a phenomenological tight binding model we show that the Fermi surface of the 111 surface states encloses an odd number of time reversal invariant momenta (TRIM) in the surface Brillouin zone confirming that the alloy is a strong topological insulator. We then develop general arguments which show that spatial symmetries lead to additional topological structure, and further constrain the surface band structure. Inversion symmetric crystals have 8 Z_2 "parity invariants", which include the 4 Z_2 invariants due to time reversal. The extra invariants determine the "surface fermion parity", which specifies which surface TRIM are enclosed by an odd number of electron or hole pockets. We provide a simple proof of this result, which provides a direct link between the surface states and the bulk parity eigenvalues. We then make specific predictions for the surface state structure for several faces of BiSb. We next show that mirror invariant band structures are characterized by an integer "mirror Chern number", n_M. The sign of n_M in the topological insulator phase of BiSb is related to a previously unexplored Z_2 parameter in the L point k.p theory of pure Bi, which we refer to as the "mirror chirality", \eta. The value of \eta predicted by the tight binding model for Bi disagrees with the value predicted by a more fundamental pseudopotential calculation. This explains a subtle disagreement between our tight binding surface state calculation and previous first principles calculations on Bi. This suggests that the tight binding parameters in the Liu Allen model of Bi need to be reconsidered. Implications for existing and future ARPES experiments and spin polarized ARPES experiments will be discussed.

Surface Landau levels and spin states in bismuth (111) ultrathin films

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Structural and Electronic Properties of Atomically Thin Bismuth on Au(111)

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Topologically Nontrivial Bismuth(111) Thin Films Grown on Bi2Te3

One-dimensional spin texture of Bi(441); Quantum Spin Hall properties without a topological insulator

Interfacial protection of topological surface states in ultrathin Sb films.

The emergence of topologically protected surface states in epitaxial Bi(111) thin films

Hybridization gap approaching the two-dimensional limit of topological insulator Bi$_x$Sb$_{1-x}$

A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111)

Angle-resolved Landau spectrum of electrons and holes in bismuth

Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials

Large surface-state conductivity in ultrathin Bi films

Topological States Modulation of Bi and Sb Thin Films by Atomic Adsorption

Surface States of the Topological Insulator Bi_{1-x}Sb_x

Presence of Exotic Electronic Surface States in LaBi and LaSb

Evolution of Topological Surface States in Antimony Ultra-Thin Films

Spin-polarized saddle points in the topological surface states of the elemental Bismuth revealed by a pump-probe spin-resolved ARPES

Epitaxial Growth of Quasi-One-Dimensional Bismuth-Halide Chains with Topological Non-Trivial Edge States

Tunable Electronic Structure and Surface States in Rare Earth Mono-Bismuthides with Partially Filled f Shell

Topological Properties Determined by Atomic Buckling in Self-Assembled Ultrathin Bi(110)