Abstract:The helicity of 3D topological insulator surface states has drawn significant attention in spintronics owing to spin-momentum locking where the carriers' spin is oriented perpendicular to their momentum. This property can provide an efficient method to convert charge currents into spin currents, and vice-versa, through the Rashba-Edelstein effect. However, experimental signatures of these surface states to the spin-charge conversion are extremely difficult to disentangle from bulk state contributions. Here, we combine spin- and angle-resolved photo-emission spectroscopy, and time-resolved THz emission spectroscopy to categorically demonstrate that spin-charge conversion arises mainly from the surface state in Bi$_{1-x}$Sb$_x$ ultrathin films, down to few nanometers where confinement effects emerge. We correlate this large conversion efficiency, typically at the level of the bulk spin Hall effect from heavy metals, to the complex Fermi surface obtained from theoretical calculations of the inverse Rashba-Edelstein response. %We demonstrate this for film thickness down to a few nanometers, Both surface state robustness and sizeable conversion efficiency in epitaxial Bi$_{1-x}$Sb$_x$ thin films bring new perspectives for ultra-low power magnetic random-access memories and broadband THz generation.

Large surface-state conductivity in ultrathin Bi films

Bi(111) Thin Film with Insulating Interior but Metallic Surfaces.

Surface Landau levels and spin states in bismuth (111) ultrathin films

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films

Interfacial protection of topological surface states in ultrathin Sb films.

Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film

Topological Limit of Ultrathin Quasi-Free-standing Bi2Te3films Grown on Si(111)

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Structural and Electronic Properties of Atomically Thin Bismuth on Au(111)

The emergence of topologically protected surface states in epitaxial Bi(111) thin films

Tunable Surface Conductivity In Bi2se3 Revealed In Diffusive Electron Transport

Spin-momentum locking and ultrafast spin-charge conversion in ultrathin epitaxial Bi$_{1-x}$Sb$_x$ topological insulator

Spin-polarized quasi 1D state with finite bandgap on the Bi/InSb(001) surface

Resolving The One-Dimensional Singularity Edge States Of Bi(111) Thin Films

Origin of the surface-state band-splitting in ultrathin Bi films: from a Rashba effect to a parity effect

Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications

Resolving the one-dimensional singularity edge states of Bi(1 1 1) thin films.

Spin-Momentum Locking and Ultrafast Spin-Charge Conversion in Ultrathin Epitaxial Bi1 - x Sbx Topological Insulator

Intrinsic Electron-Phonon Resistivity in Bi2Se3 in the Topological Regime

Hybridization gap approaching the two-dimensional limit of topological insulator Bi$_x$Sb$_{1-x}$

Intrinsic electron-phonon resistivity of Bi2Se3 in the topological regime