Abstract:Topological insulators (TIs) have become one of the intensely pursed topics during the past few years due to their robust gapless edge states, among which bismuth (Bi) enjoys a good reputation because of its rich quantum states. However, bulk Bi itself is topologically trivial. While thin Bi film has long been theoretically perceived to be a two-dimensional topological insulator, it still remains a challenge to construct free-standing Bi(111) film experimentally. Herein, we investigate the epitaxial growth of bismuth films on graphene with the film facet ranging from (110) to (111) with increasing coverage and demonstrate the topologically nontrivial property embedded in Bi(111) layers by angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations. In contrast to the bulk Bi with semimetallicity, a metallic surface state is revealed in the 7-bilayer Bi(111) with a circle-shape photoemission intensity plot, while the stacking of free-standing bismuth bilayers on graphene is rationalized to be responsible for the nontrivial characteristics of Bi(111) with an odd crossing of the Fermi level. Our report herein proposes an intriguing approach toward fabricating topologically nontrivial bismuth film, as well as advancing the fundamental understanding of Bi(111) bilayers. Importantly, the combination of the nontrivial Bi(111) film and graphene might also shed useful insights into the development of nanotronics and spintronics.

Resolving the one-dimensional singularity edge states of Bi(1 1 1) thin films.

Resolving The One-Dimensional Singularity Edge States Of Bi(111) Thin Films

Spatial and Energy Distribution of Topological Edge States in Single Bi(111) Bilayer.

Topological Limit of Ultrathin Quasi-Free-standing Bi2Te3films Grown on Si(111)

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Interfacial protection of topological surface states in ultrathin Sb films.

Epitaxial Growth of Quasi-One-Dimensional Bismuth-Halide Chains with Topological Non-Trivial Edge States

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

The emergence of topologically protected surface states in epitaxial Bi(111) thin films

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

Sierpiński Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces

Surface Landau levels and spin states in bismuth (111) ultrathin films

Spin-polarized quasi 1D state with finite bandgap on the Bi/InSb(001) surface

Tunable topological edge states in black phosphorus-like Bi(110)

One Dimensional Electronic States in Mirror Twin Boundaries of Bi (1 1 1)

Abstract Submitted for the MAR16 Meeting of The American Physical Society One-dimensional edge states in Bi(111) bilayer grown on Sb2Te3

Resolving the intrinsic bandgap and edge effect of BiI3 film epitaxially grown on graphene

Topologically Nontrivial Bismuth(111) Thin Films Grown on Bi2Te3

Competing edge structures of Sb and Bi bilayers by trivial and nontrivial band topologies