Abstract:Due to the novel physical properties induced by the strong spin orbit coupling and band inversions in the energy band structure, two-dimensional topological insulator has become a hot research point in the field of condensed matter physics and material science in recent years. Particularly, two-dimensional topological insulator may host exotic Majorana fermionic excitations in its edge state if superconductivity is introduced. Bi thin film with (111) orientation proves to be a two-dimensional topological insulator both in theory and in experiment. However, the topological nature of Bi thin film with (110) orientation has not yet been confirmed. In this study, high quality Bi(110) thin films are successfully prepared on superconductor NbSe2 surfaces, by the molecular beam epitaxial technology at ambient temperature and a low deposition rate (~24℃,~3 min/bilayer). The morphologies and electronic properties of the samples are studied by using scanning tunneling microscopy and spectroscopy. The experimental results reveal that the growth mode changes from bilayer (BL) in BL mode to monolayer (ML) in ML mode. Such transition takes place at a critical height of about 4 BLs. The mechanism of the growth mode transition is believed to be induced by the drastic variation of the surface energies of the thin films with different thickness values. Due to the large coverage of Bi(110) film on the NbSe2 substrate, it is almost impossible to find the exposed areas of NbSe2 substrate surface in practice. Especially on the sample with a large number of layers of Bi thin film, it is hard to directly determine the number of layers for each film. Hence, the critical thickness could be only estimated by controlling the deposition time and growth rate combining with the measurements of stage height of the film. The nearly identical local density of states wherever measured in the interior of a terrace or at the step edges can be discerned from the dI/dV spectra, which is thus hard to corroborate with non-trivial topology in either BL or ML thick Bi(110) film. The superconductivity induced by proximity effect from the superconducting substrate NbSe2 is also observed on the thin films. Through Bardeen-Cooper-Schrieffer type data fitting, the superconducting gap on the Bi thin film is estimated at about 0.5 meV. In addition, the quantum well state, which is often observed in thin films, is also revealed from the Bi(110) thin films, whose characteristic is equal energy spacing between peaks in dI/dV spectra. Noticeably, the spectral shapes of BL and ML are similar, and the local density of states from adjacent film layers displays an approximate πup phase shift.

Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications

Spin-polarized quasi 1D state with finite bandgap on the Bi/InSb(001) surface

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Surface Landau levels and spin states in bismuth (111) ultrathin films

Large surface-state conductivity in ultrathin Bi films

Giant Rashba-Splitting of One-Dimensional Metallic States in Bi Dimer Lines on InAs(100)

The emergence of topologically protected surface states in epitaxial Bi(111) thin films

One-dimensional spin texture of Bi(441); Quantum Spin Hall properties without a topological insulator

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Spin-momentum locking and ultrafast spin-charge conversion in ultrathin epitaxial Bi$_{1-x}$Sb$_x$ topological insulator

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Origin of the surface-state band-splitting in ultrathin Bi films: from a Rashba effect to a parity effect

Large Rashba spin splittings in bulk and monolayer of BiAs

Large Rashba splittings in bulk and monolayer of BiAs

Scanning Tunneling Microscopy Research of Bi(110) Thin Films Grown on NbSe2

Enhanced Berry Curvature Dipole and Persistent Spin Texture in the Bi(110) Monolayer

Electron States Emerging at Magnetic Domain Wall of magnetic semiconductors with strong Rashba effect

Strong spin-orbit splitting on Bi surfaces

Intrinsic Quantum Spin Hall and Anomalous Hall Effects in H-Sb/bi Epitaxial Growth on a Ferromagnetic MnO2 Thin Film.

Resolving The One-Dimensional Singularity Edge States Of Bi(111) Thin Films