Abstract:Spin field-effect transistors (SFETs) based on the Rashba effect could manipulate the spin of electrons electrically, while seeking desirable Rashba semiconductors with large Rashba constant and strong electric-field response, to preserve spin coherence remains a key challenge. Herein, we propose a series of 2D Rashba semiconductors with two-atom-thick buckled honeycomb structure (BHS) according to high-throughput first-principles density functional theory calculations. BHS semiconductors show large Rashba constants that are favorable to be integrated into nanodevices superior to conventional bulk materials, and they can be fabricated by mechanical exfoliation or chemical vapor deposition. In particular, 2D AlBi monolayer has the largest Rashba constant (2.77 eVÅ) of all 2D Rashba materials. Furthermore, 2D BiSb monolayer is a promising candidate for SFETs due to its large Rashba constant (1.94 eVÅ) and strong electric field response (0.92 eÅ<sup>2</sup>). Our designed 2D-BiSb-SFET shows shorter spin channel length (42 nm with strain) than conventional SFETs (2–5 μm).The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c04429?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c04429</a>.Microscopic mechanism for Rashba effect, computational methods, different 2D GeTe phases, comparison of results of PBE and HSE, synthesis and stability of BHS semiconductors, electrostatic potential of 2D AlBi monolayer, analysis of hybrid molecular orbital diagrams, Rashba descriptor, and details about Rashba spin precession (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c04429/suppl_file/nl0c04429_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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