Abstract:The next-generation spintronic device demands the gated control of spin transport across the semiconducting channel through the replacement of the external gate voltage source by the piezo potential, as experimentally demonstrated in Zhu et al. ACS Nano, 2018, 12 (2), 1811-1820. Consequently, a high level of out-of-plane piezoelectricity together with a large Rashba spin splitting is sought after in semiconducting channel materials. Inspired by this experiment, a new hexagonal buckled two-dimensional (2D) semiconductor, ZnTe, and its iso-electronic partner, CdTe, are proposed herewith. These 2D materials show a strong spin-orbit coupling (SOC), which is evidenced by a large Rashba constant of 1.06 and 1.27 eV·Å, respectively, in ZnTe and CdTe monolayers. Moreover, these Rashba semiconductors exhibit a giant out-of-plane piezoelectric coefficient (d33) = 88.68 and 172.61 pm/V, and can thereby generate a high piezo potential for gating purposes in spin field-effect transistors (spin-FETs). While the low elastic stiffness implies the mechanical flexibility or stretchability in these monolayers. The Rashba constants are found to be effectively modulated via external perturbations, such as strain and electric field. The wide band gap provides ample room for modulation in its electronic properties via external perturbations. Such scope is severely limited in previously reported narrow band gap Rashba semiconductors. The fascinating results found in this work indicate their great potential for applications in next-generation self-powered flexible-piezo-spintronic devices. Moreover, a new class of hexagonal buckled ZnX (X: S, Se, or Te) monolayers is proposed herein based on their previously synthesized bulk counterparts, while their electronic, mechanical, piezoelectric, and thermal properties have been thoroughly investigated using the state-of-art density functional theory (DFT).

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Tunable Rashba Spin Splitting in Two-Dimensional Polar Perovskites.

Tunable interfacial Rashba spin-orbit coupling in asymmetric Al_xIn_1-xSb/InSb/CdTe quantum well heterostructures

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Tunable interfacial Rashba spin-orbit coupling in asymmetric AlxIn1-xSb/InSb/CdTe quantum well heterostructures

Large Rashba splittings in bulk and monolayer of BiAs

Unidirectional Rashba Spin Splitting in Single Layer WS$_{2(1-x)}$Se$_{2x}$ alloy

Realization of AlSb in the Double-Layer Honeycomb Structure: A Robust Class of Two-Dimensional Material

Spin-Current Modulation in Hexagonal Buckled ZnTe and CdTe Monolayers for Self-Powered Flexible-Piezo-Spintronic Devices

Undulated 2D materials as a platform for large Rashba spin-splitting and persistent spin-helix states

Large Rashba spin splittings in bulk and monolayer of BiAs

Gated Spin Manipulation in Bipolar Rashba Semiconductor: Janus TeSSe Monolayer

Designing Rashba systems for high thermoelectric performance based on the van der Waals heterostructure

Promises and technological prospects of two-dimensional Rashba materials