Abstract:Until recently, spin polarization in nonmagnetic materials was the exclusive territory of noncentrosymmetric structures. It was recently shown that a form of “hidden spin polarization” (named the “Rashba-2” or “R-2” effect) could exist in globally centrosymmetric crystals provided the individual layers belong to polar point group symmetries. This realization could considerably broaden the range of materials that might be considered for spin-polarization spintronic applications to include the hitherto “forbidden spintronic compound” that belongs to centrosymmetric symmetries. Here we take the necessary steps to transition from such general, material-agnostic condensed matter theory arguments to material-specific “design principles” that could aid future laboratory search of R-2 materials. Specifically, we (i) classify different prototype layered structures that have been broadly studied in the literature in terms of their expected R-2 behavior, including the Bi2Se3-structure type (a prototype topological insulator), MoS2-structure type (a prototype valleytronic compound), and LaBiOS2-structure type (a host of superconductivity upon doping); (ii) formulate the properties that ideal R-2 compounds should have in terms of combination of their global unit cell symmetries with specific point group symmetries of their constituent “sectors”; and (iii) use first-principles band theory to search for compounds from the prototype family of LaOBiS2-type structures that satisfy these R-2 design metrics. We initially consider both stable and hypothetical M′OMX2 (M': Sc, Y, La, Ce, Pr, Nd, Al, Ga, In, Tl; M: P, As, Sb, Bi; X: S, Se, Te) compounds to establish an understanding of trends of R-2 with composition, and then indicate the predictions that are expected to be stable and synthesizable. We predict large spin splittings (up to ∼200meV for holes in LaOBiTe2) as well as surface Rashba states. Experimental testing of such predictions is called for.

Emergence of Rashba spin valley state in two-dimensional strained bismuth oxychalcogenides Bi$_{2}$O$_{2}$Se

Nonlinear Rashba Spin Splitting in Transition Metal Dichalcogenide Monolayers.

Unidirectional Rashba Spin Splitting in Single Layer WS$_{2(1-x)}$Se$_{2x}$ alloy

Large Tunable Rashba Spin Splitting of A Two-Dimensional Electron Gas in Bi2se3

Raman Spectra and Strain Effects in Bismuth Oxychalcogenides

Ideal two-dimensional electron systems with a giant Rashba-type spin splitting in real materials: surfaces of bismuth tellurohalides

Giant Rashba-like Spin–orbit Splitting with Distinct Spin Texture in Two-Dimensional Heterostructures*

Undulated 2D materials as a platform for large Rashba spin-splitting and persistent spin-helix states

Anisotropic Rashba splitting dominated by out-of-plane spin polarization in two-dimensional Janus $XA_{2}Y$ ($A$= Si, Sn, Ge; $X,Y$= Sb, Bi) with surface imperfection

Manipulation of the Large Rashba Spin Splitting in Polar Two-Dimensional Transition Metal Dichalcogenides

Rashba Splitting In Bilayer Transition Metal Dichalcogenides Controlled By Electronic Ferroelectricity

Search and design of nonmagnetic centrosymmetric layered crystals with large local spin polarization

Large tuneable Rashba spin splitting of a two-dimensional electron gas in Bi2Se3

Reversible and nonvolatile manipulation of the spin-orbit interaction in ferroelectric field-effect transistors based on a two-dimensional bismuth oxychalcogenide

Manipulation Of The Large Rashba Spin Splitting In Polar Two-Dimensional Transition-Metal Dichalcogenides

Direct Band Gap and Strong Rashba Effect in Van Der Waals Heterostructures of InSe and Sb Single Layers

Rashba spin-splitting control at the surface of the topological insulator Bi2Se3

Intrinsic and Anisotropic Rashba Spin Splitting in Janus Transition-Metal Dichalcogenide Monolayers

Controlling Rashba Spin Orbit Coupling in Polar Two-Dimensional Transition Metal Dichalcogenide

Spin Hall Effect in the Monolayer Janus Compound MoSSe Enhanced by Rashba Spin-Orbit Coupling

Density functional theory study of two-dimensional bismuth selenite: layer-dependent electronic, transport and optical properties with spin-orbit coupling.