Abstract:The experimental evidence of the ultra-high electron mobility and strong spin-orbit coupling in the two-dimensional (2D) layered bismuth-based oxyselenide, Bi$_{2}$O$_{2}$Se, makes it a potential material for spintronic devices. However, its spin-related properties have not been extensively studied due to the centrosymmetric nature of its crystal structure. By using first-principles density-functional theory calculation, this study reports the emergence of Rashba-spin-valley states in Bi$_{2}$O$_{2}$Se monolayer (ML). Breaking the crystal inversion symmetry of Bi$_{2}$O$_{2}$Se ML using an external electric field enables the Rashba-spin-valley formation, causing the appearance of the Rashba-type splitting around the $\Gamma$ valley and spin-valley coupling at the $D$ valleys located near the middle of $\Gamma-M$ line. In addition to the typical Rashba-type spin textures around the $\Gamma$ valley, the study also observed in-plane unidirectional spin textures around the $D$ valleys, which is a rare phenomenon in 2D materials. The observed Rashba-spin-valley states are driven by the lowering point group symmetry of the crystal from $D_{4h}$ to $C_{4v}$ enforced by the electric field, as clarified through $\vec{k}\cdot\vec{p}$ model derived from symmetry analysis. More importantly, tuning the Rashba and spin-valley states by using biaxial strain offers a promising route to regulate the spin textures and spin splitting preventing the electron from back-scattering in spin transport. Finally, we proposed a more realistic system, namely, Bi$_{2}$O$_{2}$Se ML/SrTiO$_{3}$ (001) heterointerface that supports the strong Rashba-spin-valley states and highlighting the potential of the Bi$_{2}$O$_{2}$Se ML for future spintronics and valleytronics-based devices.

Large tuneable Rashba spin splitting of a two-dimensional electron gas in Bi2Se3

Large Tunable Rashba Spin Splitting of A Two-Dimensional Electron Gas in Bi2se3

Rashba spin-splitting control at the surface of the topological insulator Bi2Se3

Nonlinear Rashba Spin Splitting in Transition Metal Dichalcogenide Monolayers.

Large Bilinear Magnetoresistance from Rashba Spin-Splitting on the Surface of a Topological Insulator

Ideal two-dimensional electron systems with a giant Rashba-type spin splitting in real materials: surfaces of bismuth tellurohalides

Silicon surface with giant spin-splitting

Rashba Effect in Pbte/Pbsrte Asymmetric Quantum Wells

Giant Rashba-like Spin–orbit Splitting with Distinct Spin Texture in Two-Dimensional Heterostructures*

Unidirectional Rashba Spin Splitting in Single Layer WS$_{2(1-x)}$Se$_{2x}$ alloy

Bulk Rashba spin splitting and Dirac surface state in $p$-type (Bi$_{0.9}$Sb$_{0.1})_2$Se$_3$ single crystal

Quantum Oscillation of Rashba Spin Splitting in Topological Insulator Bi2se3 Induced by the Quantum Size Effects of Pb Adlayers

Electron–phonon Coupling in the Two‐dimensional Electron Gas on Bi2Se3

Electronic states driven by the crystal field in two-dimensional materials: The case of antimonene

Nonvolatile Electric Control of Rashba Spin Splitting in Sb/In2Se3 Heterostructure.

Dipole Control of Rashba Spin Splitting in a Type-Ii Sb/InSe Van Der Waals Heterostructure

Large Tunable Spin-to-Charge Conversion Induced by Hybrid Rashba and Dirac Surface States in Topological Insulator Heterostructures

Electrical Control of Large Rashba Effect in Oxide Heterostructures

Interplay between Topological States and Rashba States as Manifested on Surface Steps at Room Temperature

Emergence of Rashba spin valley state in two-dimensional strained bismuth oxychalcogenides Bi$_{2}$O$_{2}$Se

Temperature dependent infrared spectroscopy of the Rashba spin-splitting semiconductor BiTeI