Abstract:Atomically thin two-dimensional (2D) layered semiconductors such as transition metal dichalcogenides (TMDs) have attracted considerable attention due to their tunable band gap, intriguing spin-valley physics, piezoelectric effects and potential device applications. Here we study the electronic properties of a single layer WS$_{1.4}$Se$_{0.6}$ alloys. The electronic structure of this alloy, explored using angle resolved photoemission spectroscopy, shows a clear valence band structure anisotropy characterized by two paraboloids shifted in one direction of the k-space by a constant in-plane vector. This band splitting is a signature of a unidirectional Rashba spin splitting with a related giant Rashba parameter of 2.8 0.7 eV . The combination of angle resolved photoemission spectroscopy with piezo force microscopy highlights the link between this giant unidirectional Rashba spin splitting and an in-plane polarization present in the alloy. These peculiar anisotropic properties of the WS$_{1.4}$Se$_{0.6}$ alloy can be related to local atomic orders induced during the growth process due the different size and electronegativity between S and Se atoms. This distorted crystal structure combined to the observed macroscopic tensile strain, as evidenced by photoluminescence, displays electric dipoles with a strong in-plane component, as shown by piezoelectric microscopy. The interplay between semiconducting properties, in-plane spontaneous polarization and giant out-of-plane Rashba spin-splitting in this two-dimensional material has potential for a wide range of applications in next-generation electronics, piezotronics and spintronics devices.

Nonvolatile Electric Control of Rashba Spin Splitting in Sb/In 2 Se 3 Heterostructure

Nonlinear Rashba Spin Splitting in Transition Metal Dichalcogenide Monolayers.

Large and nonlinear electric field response in a two-dimensional ferroelectric Rashba material

A Novel Ferroelectric Rashba Semiconductor

Large Tunable Rashba Spin Splitting of A Two-Dimensional Electron Gas in Bi2se3

Direct Band Gap and Strong Rashba Effect in Van Der Waals Heterostructures of InSe and Sb Single Layers

Reversible and nonvolatile manipulation of the spin-orbit interaction in ferroelectric field-effect transistors based on a two-dimensional bismuth oxychalcogenide

Highly Efficient Electric-Field Control of Giant Rashba Spin-Orbit Coupling in Lattice-Matched InSb/CdTe Heterostructures.

Electrical Control of Large Rashba Effect in Oxide Heterostructures

Rashba Splitting In Bilayer Transition Metal Dichalcogenides Controlled By Electronic Ferroelectricity

Ferroelectricity and Large Rashba Splitting in Two-Dimensional Tellurium

High-Throughput Inverse Design for 2D Ferroelectric Rashba Semiconductors

Persistent spin helix in Rashba-Dresselhaus ferroelectric CsBiNb2O7

Bipolar Rashba Semiconductors: A Class of Nonmagnetic Materials for Electrical Spin Manipulation

Switchable Enhanced Spin Photocurrent In Rashba And Cubic Dresselhaus Ferroelectric Semiconductors

Tunable Rashba Spin Splitting in Two-Dimensional Polar Perovskites.

Designing Rashba systems for high thermoelectric performance based on the van der Waals heterostructure

Unidirectional Rashba Spin Splitting in Single Layer WS$_{2(1-x)}$Se$_{2x}$ alloy

Giant Rashba-like Spin–orbit Splitting with Distinct Spin Texture in Two-Dimensional Heterostructures*

Large tuneable Rashba spin splitting of a two-dimensional electron gas in Bi2Se3

Nonvolatile electrical control of spin polarization in the 2D bipolar magnetic semiconductor VSeF