Abstract: In systems with broken inversion symmetry spin-orbit coupling (SOC) yields a Rashba-type spin splitting of electronic states, manifested in a k-dependent splitting of the bands. While most research had previously focused on 2D electron systems, recently a three-dimensional (3D) form of such Rashba-effect was found in a series of bismuth tellurohalides. Whereas these materials exhibit a very large spin-splitting, they lack an important property concerning functionalization, namely the possibility to switch or tune the spin texture. This limitation can be overcome in a new class of functional materials displaying Rashba-splitting coupled to ferroelectricity: the ferroelectric Rashba semiconductors (FERS). Using spin- and angle-resolved photoemission spectroscopy (SARPES) we show that GeTe(111) forms a prime member of this class, displaying a complex spin-texture for the Rashba-split surface and bulk bands arising from the intrinsic inversion symmetry breaking caused by the ferroelectric polarization of the bulk (FE). Apart from pure surface and bulk states we find surface-bulk resonant states (SBR) whose wavefunctions entangle the spinors from the bulk and surface contributions. At the Fermi level their hybridization results in unconventional spin topologies with cochiral helicities and concomitant gap opening. The GeTe(111) surface and SBR states make the semiconductor surface conducting. At the same time our SARPES data confirm that GeTe is a narrow-gap semiconductor, suggesting that GeTe(111) electronic states are endowed with spin properties that are theoretically challenging to anticipate. As the helicity of the spins in Rashba bands is connected to the direction of the FE polarization, this work paves the way to all-electric non-volatile control of spin-transport properties in semiconductors.

Ferroelectric control of the spin texture in germanium telluride

Surface versus bulk contributions to the giant Rashba splitting in the ferroelectric {\alpha}-GeTe(111) semiconductor

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Tuning Spin Hall Conductivity in GeTe by Ferroelectric Polarization

A Novel Ferroelectric Rashba Semiconductor

Spin Dynamics Modulated by Rashba States in Ferroelectric α-GeTe

Ferroelectricity and Large Rashba Splitting in Two-Dimensional Tellurium

Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride

Pushing the Thickness Limit of the Giant Rashba Effect in Ferroelectric Semiconductor GeTe

Domain wall migration-mediated ferroelectric switching and Rashba effect tuning in GeTe thin films

Large Tunable Rashba Spin Splitting of A Two-Dimensional Electron Gas in Bi2se3

Surface Spin Polarization in the Magnetic Response of GeTe Rashba Ferroelectric

Electric control of optically-induced magnetization dynamics in a van der Waals ferromagnetic semiconductor

Switchable Enhanced Spin Photocurrent In Rashba And Cubic Dresselhaus Ferroelectric Semiconductors

Nonvolatile Ferroelectric Control of Electronic Properties of Bi 2 Te 3

Nonvolatile Electrical Control Of 2d Cr2ge2te6 And Intrinsic Half Metallicity In Multiferroic Hetero-Structures

Controllable spin splitting in 2D Ferroelectric few-layer ${$γ}$-GeSe

Persistent spin helix in Rashba-Dresselhaus ferroelectric CsBiNb2O7

Large and nonlinear electric field response in a two-dimensional ferroelectric Rashba material