Abstract: In systems with broken inversion symmetry spin-orbit coupling (SOC) yields a Rashba-type spin splitting of electronic states, manifested in a k-dependent splitting of the bands. While most research had previously focused on 2D electron systems, recently a three-dimensional (3D) form of such Rashba-effect was found in a series of bismuth tellurohalides. Whereas these materials exhibit a very large spin-splitting, they lack an important property concerning functionalization, namely the possibility to switch or tune the spin texture. This limitation can be overcome in a new class of functional materials displaying Rashba-splitting coupled to ferroelectricity: the ferroelectric Rashba semiconductors (FERS). Using spin- and angle-resolved photoemission spectroscopy (SARPES) we show that GeTe(111) forms a prime member of this class, displaying a complex spin-texture for the Rashba-split surface and bulk bands arising from the intrinsic inversion symmetry breaking caused by the ferroelectric polarization of the bulk (FE). Apart from pure surface and bulk states we find surface-bulk resonant states (SBR) whose wavefunctions entangle the spinors from the bulk and surface contributions. At the Fermi level their hybridization results in unconventional spin topologies with cochiral helicities and concomitant gap opening. The GeTe(111) surface and SBR states make the semiconductor surface conducting. At the same time our SARPES data confirm that GeTe is a narrow-gap semiconductor, suggesting that GeTe(111) electronic states are endowed with spin properties that are theoretically challenging to anticipate. As the helicity of the spins in Rashba bands is connected to the direction of the FE polarization, this work paves the way to all-electric non-volatile control of spin-transport properties in semiconductors.

Spin Dynamics Modulated by Rashba States in Ferroelectric α-GeTe

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Surface versus bulk contributions to the giant Rashba splitting in the ferroelectric {\alpha}-GeTe(111) semiconductor

Ferroelectric control of the spin texture in germanium telluride

Tuning Spin Hall Conductivity in GeTe by Ferroelectric Polarization

Surface Spin Polarization in the Magnetic Response of GeTe Rashba Ferroelectric

Three-Dimensional Limit of Bulk Rashba Effect in Ferroelectric Semiconductor GeTe

Pushing the Thickness Limit of the Giant Rashba Effect in Ferroelectric Semiconductor GeTe

Manipulation of topological spin configuration via tailoring thickness in van der Waals ferromagnetic Fe 5 − x Ge Te 2

Lattice dynamics, phonon chirality and spin-phonon coupling in 2D itinerant ferromagnet Fe3GeTe2

Anisotropic Nonlocal Damping in Ferromagnet/α−GeTe Bilayers Enabled by Splitting Energy Bands

Large and nonlinear electric field response in a two-dimensional ferroelectric Rashba material

Probing Magnetoelectric Effect in the Spin-Modulated Magnet Fe2GeO4

A Novel Ferroelectric Rashba Semiconductor

Emergent Magnetic Phases with Robust Two-Dimensional Spin Interactions and Electronic Transport in Above-Room Temperature Ferromagnet Fe3GaTe2

Anisotropic magnetization dynamics in Fe5GeTe2 at room temperature

Electrical detection of spin pumping in van der Waals ferromagnetic Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub> with low magnetic damping

Generation and Control of Terahertz Spin Currents in Topology-Induced 2D Ferromagnetic Fe3 GeTe2 |Bi2 Te3 Heterostructures

Controllable spin splitting in 2D Ferroelectric few-layer ${$γ}$-GeSe