Abstract:2D layered germanium selenide (GeSe) material possesses in‐plane anisotropy because of low‐symmetry crystal structure with a new degree of freedom for enhanced optical and electronic properties. However, their systematic vibrational and electronics properties are still under the scope to study. Herein, the vibrational properties of GeSe sheets are studied by Raman spectroscopy. Whereas, the temperature‐dependent electronic band structure is studied using angle‐resolved photoemission spectroscopy (ARPES) combined with density functional theory calculations. Moreover, the field‐effect transistor (FET) is fabricated on a few‐layer GeSe with high performance. The vibrational modes B3g1 and Ag1 demonstrates linear softening as the temperature increases, with temperature coefficient value associated by anharmonic phonon–phonon/electron coupling. Besides, the enhanced dielectric screening effect of long‐range Coulomb and interlayer interaction is observed from bulk to monolayer. Similarly, ARPES results further show Fermi level movement toward the valance band as increased temperature represents hole doping to pining the Fermi level, which indicates superior carrier concentration for electronic properties. The fabricated FET device on six layers GeSe exhibits high carrier mobility of 52.89 cm2 V−1 s−1 with an on/off ratio above 4 × 105 at room temperature, while it decreased below the room temperature. Our results provide the important figure of merit for GeSe‐based novel nanoelectronic and thermoelectric devices. The temperature dependent Raman study of a few layers germanium selenide (GeSe) shows linear softening due to an anharmonic phonon–phonon/electron coupling, while, the Fermi level of GeSe shifting toward the conduction band as the temperature increases. This can show the increased carrier concentration in GeSe, which can further enhance the device performance of the GeSe sheet with high mobility.

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Three-Dimensional Limit of Bulk Rashba Effect in Ferroelectric Semiconductor GeTe

Surface versus bulk contributions to the giant Rashba splitting in the ferroelectric {\alpha}-GeTe(111) semiconductor

Ferroelectric control of the spin texture in germanium telluride

Spin Dynamics Modulated by Rashba States in Ferroelectric α-GeTe

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Domain wall migration-mediated ferroelectric switching and Rashba effect tuning in GeTe thin films

Large Tunable Rashba Spin Splitting of A Two-Dimensional Electron Gas in Bi2se3

Rashba Effect in Pbte/Pbsrte Asymmetric Quantum Wells

The Giant Spin-to-Charge Conversion of the Layered Rashba Material BiTeI

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Tunable Ferroelectricity and Anisotropic Electric Transport in Monolayer Β-Gese

Unidirectional Rashba Spin Splitting in Single Layer WS$_{2(1-x)}$Se$_{2x}$ alloy

Large electrically and chemically tunable Rashba-Dresselhaus effects in Ferroelectric CsGeX$_3$ (X=Cl, Br, I) perovskites

Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In$_{2}$Se$_{3}$

Theory of ultrathin ferroelectrics: the case of CsGeBr$_3$

Controllable spin splitting in 2D Ferroelectric few-layer ${$γ}$-GeSe

Rashba Effect Maximizes Thermoelectric Performance of GeTe Derivatives

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Nonvolatile Electric Control of Rashba Spin Splitting in Sb/In 2 Se 3 Heterostructure

Tuning spin-charge interconversion with quantum confinement in ultrathin Bi/Ge(111) films