Controllable spin splitting in 2D Ferroelectric few-layer ${$γ}$-GeSe

Shuyi Shi,Kuan-Rong Hao,Xing-Yu Ma,Qing-Bo Yan,Gang Su

DOI: https://doi.org/10.1088/1361-648X/acdd3e

2023-06-16

Abstract:${\gamma}$-GeSe is a new type of layered bulk material that was recently successfully synthesized. By means of density functional theory first-principles calculations, we systematically studied the physical properties of two-dimensional (2D) few-layer ${\gamma}$-GeSe. It is found that few-layer ${\gamma}$-GeSe are semiconductors with band gaps decreasing with increasing layer number; and 2D ${\gamma}$-GeSe with layer number $n \geq 2$ are ferroelectric with rather low transition barriers, consistent with the sliding ferroelectric mechanism. Particularly, spin-orbit coupling induced spin splitting is observed at the top of the valence band, which can be switched by the ferroelectric reversal; furthermore, their negative piezoelectricity also enables the regulation of spin splitting by strain. Finally, excellent optical absorption was also revealed. These intriguing properties make 2D few-layer ${\gamma}$-GeSe promising in spintronic and optoelectric applications.

Materials Science

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to explore the controllable spin - splitting phenomenon in two - dimensional (2D) multi - layer γ - GeSe materials and its potential applications. Specifically, the authors systematically studied the physical properties of 2D multi - layer γ - GeSe through first - principles calculations and focused on the following aspects:

1. **Band - gap characteristics**: Research shows that as the number of layers increases, the band - gap of 2D γ - GeSe gradually decreases.

2. **Ferroelectricity and piezoelectricity**: For 2D γ - GeSe with the number of layers \(n \geq 2\), since the AB' stacking breaks the inversion symmetry, the material exhibits ferroelectricity and piezoelectricity. In particular, bilayer γ - GeSe has a low inversion barrier, which conforms to the slip - ferroelectric mechanism.

3. **Spin - splitting caused by spin - orbit coupling**: The spin - splitting phenomenon caused by spin - orbit coupling (SOC) was observed at the top of the valence band. This spin - splitting can be switched by ferroelectric inversion and can also be regulated by strain due to its negative piezoelectric effect.

4. **Optical absorption performance**: The research also revealed that bilayer γ - GeSe has excellent optical absorption performance, especially in the visible light range, showing a higher absorption rate than black phosphorus and monolayer MoS₂.

These findings indicate that 2D multi - layer γ - GeSe has great potential in the fields of spintronics and photoelectric applications, especially in the development of new - type electronics, photovoltaics, photodetectors and photocatalysts.

### Formula summary
- **Spin - splitting formula**:
\[
\Delta=\sqrt{v_{k}^{2}k^{2}+\lambda_{k}^{2}k^{6}\cos^{2}(3\theta)}
\]
where \(v_{k} = v(1+\alpha k^{2})\), \(\lambda_{k}\) is the warping parameter, \(\theta=\tan^{-1}\left(\frac{k_{y}}{k_{x}}\right)\)

- **Piezoelectric coefficient**:
\[
e_{33}=- 0.535\,\mu\text{C/cm}^{2}
\]

- **Effective mass**:
\[
m_{e}^{*}=0.15m_{0},\quad m_{h}^{*}=0.42m_{0}
\]
where \(m_{0}\) is the mass of free electrons.

These properties make 2D multi - layer γ - GeSe an ideal candidate material for future high - performance electronic and photoelectric devices.