Abstract:2D layered germanium selenide (GeSe) material possesses in‐plane anisotropy because of low‐symmetry crystal structure with a new degree of freedom for enhanced optical and electronic properties. However, their systematic vibrational and electronics properties are still under the scope to study. Herein, the vibrational properties of GeSe sheets are studied by Raman spectroscopy. Whereas, the temperature‐dependent electronic band structure is studied using angle‐resolved photoemission spectroscopy (ARPES) combined with density functional theory calculations. Moreover, the field‐effect transistor (FET) is fabricated on a few‐layer GeSe with high performance. The vibrational modes B3g1 and Ag1 demonstrates linear softening as the temperature increases, with temperature coefficient value associated by anharmonic phonon–phonon/electron coupling. Besides, the enhanced dielectric screening effect of long‐range Coulomb and interlayer interaction is observed from bulk to monolayer. Similarly, ARPES results further show Fermi level movement toward the valance band as increased temperature represents hole doping to pining the Fermi level, which indicates superior carrier concentration for electronic properties. The fabricated FET device on six layers GeSe exhibits high carrier mobility of 52.89 cm2 V−1 s−1 with an on/off ratio above 4 × 105 at room temperature, while it decreased below the room temperature. Our results provide the important figure of merit for GeSe‐based novel nanoelectronic and thermoelectric devices. The temperature dependent Raman study of a few layers germanium selenide (GeSe) shows linear softening due to an anharmonic phonon–phonon/electron coupling, while, the Fermi level of GeSe shifting toward the conduction band as the temperature increases. This can show the increased carrier concentration in GeSe, which can further enhance the device performance of the GeSe sheet with high mobility.

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Spin Dynamics Modulated by Rashba States in Ferroelectric α-GeTe

Tunable spin photogalvanic effect in two-dimensional van der Waals ferroelectric semiconductors with spin-orbit coupling

A type-II MnPSe 3 /GeC heterostructure with tunable spin and valley splitting

Controllable magnetic anisotropy and ferroelasticity in superconducting FeSe monolayer with surface fluorine adsorption

Temperature Modulating Fermi Level Pinning in 2D GeSe for High‐Performance Transistor

Tunable Electrical Properties and Multiple-phases of Ferromagnetic GdS2, GdSe2 and Janus GdSSe Monolayers

Realization of the Tunable Multivalley System in a GeSe Monolayer by Atomic Substitution

Unidirectional Rashba Spin Splitting in Single Layer WS$_{2(1-x)}$Se$_{2x}$ alloy

Electric-Field-Induced Room-Temperature Antiferroelectric–Ferroelectric Phase Transition in van der Waals Layered GeSe

Band structure, ferroelectric instability, and spin-orbital coupling effect of bilayer -In<sub>2</sub>Se<sub>3</sub>

Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6