Abstract: In systems with broken inversion symmetry spin-orbit coupling (SOC) yields a Rashba-type spin splitting of electronic states, manifested in a k-dependent splitting of the bands. While most research had previously focused on 2D electron systems, recently a three-dimensional (3D) form of such Rashba-effect was found in a series of bismuth tellurohalides. Whereas these materials exhibit a very large spin-splitting, they lack an important property concerning functionalization, namely the possibility to switch or tune the spin texture. This limitation can be overcome in a new class of functional materials displaying Rashba-splitting coupled to ferroelectricity: the ferroelectric Rashba semiconductors (FERS). Using spin- and angle-resolved photoemission spectroscopy (SARPES) we show that GeTe(111) forms a prime member of this class, displaying a complex spin-texture for the Rashba-split surface and bulk bands arising from the intrinsic inversion symmetry breaking caused by the ferroelectric polarization of the bulk (FE). Apart from pure surface and bulk states we find surface-bulk resonant states (SBR) whose wavefunctions entangle the spinors from the bulk and surface contributions. At the Fermi level their hybridization results in unconventional spin topologies with cochiral helicities and concomitant gap opening. The GeTe(111) surface and SBR states make the semiconductor surface conducting. At the same time our SARPES data confirm that GeTe is a narrow-gap semiconductor, suggesting that GeTe(111) electronic states are endowed with spin properties that are theoretically challenging to anticipate. As the helicity of the spins in Rashba bands is connected to the direction of the FE polarization, this work paves the way to all-electric non-volatile control of spin-transport properties in semiconductors.

Domain wall migration-mediated ferroelectric switching and Rashba effect tuning in GeTe thin films

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Tunable Ferroelectricity and Anisotropic Electric Transport in Monolayer Β-Gese

Ferroelectric control of the spin texture in germanium telluride

Pushing the Thickness Limit of the Giant Rashba Effect in Ferroelectric Semiconductor GeTe

Surface versus bulk contributions to the giant Rashba splitting in the ferroelectric {\alpha}-GeTe(111) semiconductor

Polarization switching induced by domain wall sliding in two-dimensional ferroelectric monochalcogenides

Tuning Spin Hall Conductivity in GeTe by Ferroelectric Polarization

Current-induced domain wall motion in a van der Waals ferromagnet Fe 3 GeTe 2

Electric-Field-Induced Room-Temperature Antiferroelectric–Ferroelectric Phase Transition in van der Waals Layered GeSe

Controllable Domain Walls in Two-Dimensional Ferromagnetic Material Fe<sub>3</sub>GeTe<sub>2</sub> Based on the Spin-Transfer Torque Effect

Large electrically and chemically tunable Rashba-Dresselhaus effects in Ferroelectric CsGeX$_3$ (X=Cl, Br, I) perovskites

Synthesis mechanism and magnetoresistance effect of millimeter-sized GeTe faceted crystals

Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride

Spin Dynamics Modulated by Rashba States in Ferroelectric α-GeTe

Structural and thermal transport properties of ferroelectric domain walls in GeTe from first principles

Tunable vertical ferroelectricity and domain walls by interlayer sliding in β-ZrI2

Nonvolatile Ferroelectric Control of Electronic Properties of Bi 2 Te 3

A Novel Ferroelectric Rashba Semiconductor

Atomic-scale Mechanisms of Ferroelastic Domain-Wall-mediated Ferroelectric Switching

Promising ferroelectricity in 2D group IV tellurides: a first-principles study