Abstract:Spintronic devices, by harnessing the spin degree of freedom, are expected to outperform charge-based devices in terms of energy efficiency and speed of operation. The use of an electric field to control spin at room temperature has been pursued for decades. A major hurdle that has contributed to the slow progress in this regard is the dilemma between effective control and strong spin relaxation. For example, in a Rashba/Dresselhaus material with strong spin–orbit coupling, although the internal magnetic field could be substantial enough to effectively control spin precession, often, the spin-relaxation time becomes extremely short as a consequence of Dyakonov–Perel scattering. To address this, a persistent spin helix has been proposed in systems with SU(2) symmetry. Here we show the discovery of the persistent spin helix in an organic–inorganic hybrid ferroelectric halide perovskite whose layered nature makes it intrinsically like a quantum well. We demonstrate that the spin-polarized band structure is switchable at room temperature via an intrinsic ferroelectric field. We reveal valley–spin coupling through a circular photogalvanic effect in single-crystalline bulk crystals. The favoured short spin helix wavelength (three orders of magnitude shorter than in III–V materials), room-temperature operation and non-volatility make the hybrid perovskite an ideal platform for understanding symmetry-tuned spin dynamics, towards designing practical spintronic materials and devices that can resolve the control-relaxation dilemma.

Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride

Ferroelectric control of the spin texture in germanium telluride

Domain wall migration-mediated ferroelectric switching and Rashba effect tuning in GeTe thin films

Optically reconfigurable polarized emission in Germanium

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Emergent Ferroelectric Switching Behavior from Polar Vortex Lattice

Room-temperature Ferroelectricity and a Switchable Diode Effect in Two-Dimensional Α-In2se3 Thin Layers.

Room-temperature Electrically Switchable Spin–valley Coupling in a Van Der Waals Ferroelectric Halide Perovskite with Persistent Spin Helix

Ferroelectricity and Large Rashba Splitting in Two-Dimensional Tellurium

Controlled switching of ferroelectric SnSe monolayers at room temperature

Electric-Field-Induced Room-Temperature Antiferroelectric–Ferroelectric Phase Transition in van der Waals Layered GeSe

Multilevel polarization switching in ferroelectric thin films

Optoelectronic characterisation of twisted germanium sulfide nanowires with experimental observation of intrinsic ferroelectricity

Room-temperature polarization and spin switching via electron transfer in a valence tautomer

Ferroelectric switching of a two-dimensional metal

Tuning Spin Hall Conductivity in GeTe by Ferroelectric Polarization

Ferroelectric switching at symmetry-broken interfaces by local control of dislocation networks

Room-Temperature Highly-Tunable Coercivity and Highly-Efficient Nonvolatile Multi-States Magnetization Switching by Small Current in Single 2D Ferromagnet Fe$_3$GaTe$_2$

Lead-free room-temperature ferroelectric thermal conductivity switch using anisotropies in thermal conductivities

A Novel Ferroelectric Rashba Semiconductor

An Electrically Switchable Anti-Ferroelectric Bilayer In2Se3 Based Opto-Spintronic Device