Abstract:Due to the unique anisotropic chemical and physical properties, two-dimensional (2D) layered materials, such as IV-VI monochalcogenides with puckered honeycomb structure, have received considerable interest recently. Among the IV-VI layered MX (M = Ge, Sn; X = Se, S) compounds, germanium sulfide (GeS) stands out for its strongest anisotropic thermal conductivities and figure-of-merit values. Additionally, the layer-independent direct energy bands (Eg ∼1.6 eV, E1 ∼2.1 eV) of GeS flake provide excellent insights into further applications as visible photodetectors. Herein, the polarization-tunable nonlinear absorption (NA) patterns of GeS flake have been systematically investigated. Specifically, both the polarization-dependent Raman spectroscopy and the linear absorption (LA) spectroscopy were employed to characterize the lattice orientation and absorption edges of the 251-nm GeS flake. Considering the low damage threshold of GeS flake, the GeS/graphene heterostructure was fabricated to increase the threshold without changing the nonlinear properties of GeS. Our NA results demonstrated that a 600-nm femtosecond laser with different polarizations would excite the saturated-absorption (SA) effect along armchair and reverse-saturated-absorption (RSA) effect along zigzag in the GeS/graphene heterostructure. Moreover, the function of the polarization-based GeS/graphene heterostructure all-optical switch was experimentally verified. Notably, thanks to the polarization-dependent NA patterns (SA/RSA) of GeS, the "ON" and "OFF" states of the all-optical switch can be accomplished by high and low transmittance states of continuous-wave laser (532 nm, 80 nW), whose state can be controlled by the polarization of femtosecond switching laser (600 nm, 35 fs, 500 Hz, 12 GW cm−2). The ON/OFF ratio can achieve up to 17% by changing polarization, compared with the ratios of 3.0% by increasing the incident power of switching light in our experiment. The polarization-tunable absorption patterns introduced in this work open up real perspectives for the next-generation optoelectronic devices based on GeS/graphene heterostructure.

Optoelectronic characterisation of twisted germanium sulfide nanowires with experimental observation of intrinsic ferroelectricity

Tunable Ferroelectricity and Anisotropic Electric Transport in Monolayer Β-Gese

Polarization-tunable nonlinear absorption patterns from saturated absorption to reverse saturated absorption in anisotropic GeS flake and an application of all-optical switching

Unraveling electronic structure of GeS through ARPES and its correlation with anisotropic optical and transport behavior

Adjustable 1D ferroelectricity and ferrielectricity in faceted GeSe nanotubes

Coexistence of ferroelectricity and ferromagnetism in hex-GeS nanowires

Optical Properties of Orthorhombic Germanium Sulfide: Unveiling the Anisotropic Nature of Wannier Excitons.

Strain-tunable robust ferroelectricity in two-dimensional monochalcogenide heterostructures

Optical properties of orthorhombic germanium sulfide: Unveiling the Anisotropic Nature of Wannier Exciton

Room-temperature ferroelectric, piezoelectric and resistive switching behaviors of single-element Te nanowires

Domain wall migration-mediated ferroelectric switching and Rashba effect tuning in GeTe thin films

Ferromagnetic Germanide in Ge Nanowire Transistors for Spintronics Application

Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride

Dimensionality Effects in FeGe 2 Nanowires: Enhanced Anisotropic Magnetization and Anomalous Electrical Transport

Electric-Field-Induced Room-Temperature Antiferroelectric–Ferroelectric Phase Transition in van der Waals Layered GeSe

Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain

Controllable Edge Epitaxy of Helical GeSe/GeS Heterostructures

Ferroelectricity-controlled magnetic ordering and spin photocurrent in NiCl2/GeS multiferroic heterostructures

Ferroelectricity in novel one-dimensional P42-InSeI nanowires

Twist‐Controlled Ferroelectricity and Emergent Multiferroicity in WSe2 Bilayers