Abstract:In recent years, room-temperature ferroelectricity has been experimentally confirmed in a series of two-dimensional (2D) materials. Theoretically, for isolated ferroelectricity in even lower dimensions such as 1D or 0D, the switching barriers may still ensure the room-temperature robustness for ultrahigh-density non-volatile memories, which has yet been scarcely explored. Here, we show ab initio designs of 0D/1D ferroelectrics/multiferroics based on functionalized transition-metal molecular sandwich nanowires (SNWs) with intriguing properties. Some functional groups such as -COOH will spontaneously form into robust threefold helical hydrogen-bonded chains around SNWs with considerable polarizations. Two modes of ferroelectric switching are revealed: when the ends of SNWs are not hydrogen-bonded, the polarizations can be reversed via ligand reorientation that will reform the hydrogen-bonded chains and alter their helicity; when both ends are hydrogen-bonded, the polarizations can be reversed via proton transfer without changing the helicity of chains. The combination of those two modes makes the system the smallest proton conductor with a moderate migration barrier, which is lower compared with many prevalent proton-conductors for higher mobility while still ensuring the robustness at ambient conditions. This desirable feature can be utilized for constructing nanoscale artificial ionic synapses that may enable neuromorphic computing. In such a design of synaptic transistors, the migration of protons through those chains can be controlled and continuously change the conductance of MXene-based post-neuron for nonvolatile multilevel resistance. The success of mimicking synaptic functions will make such designs promising in future high-density artificial neutral systems.

Room-temperature ferroelectric, piezoelectric and resistive switching behaviors of single-element Te nanowires

Observation of room-temperature ferroelectricity in elemental Te nanowires

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Nonvolatile Ferroelectric Field-Effect Transistors.

Ferroelectric-carbon Nanotube Memory Devices.

Wafer-scale Te Thin Film with High Hole Mobility and Piezoelectric Coefficients

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Robust Piezoelectricity with Spontaneous Polarization in Monolayer Tellurene and Multilayer Tellurium Film at Room Temperature for Reliable Memory

Reversible nanocracks-induced resistive switching manipulated by ferroelectric polarizing in Te/PMN-PT heterostructures

0D/1D organic ferroelectrics/multiferroics for ultrahigh density integration: Helical hydrogen-bonded chains, multi-mode switching, and proton synaptic transistors

Single-Crystalline Nanowires of Molecular Ferroelectric Semiconductors for Optoelectronic Memory

Nanotube ferroelectric tunnel junctions with giant tunneling electroresistance ratio

Electric-field-driven ferroelectric nanodomain structure and its multilevel data storage application

Ferroelectric gated electrical transport in CdS nanotetrapods.

A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields

A Ferroelectric Tunnel Junction Based On The Piezoelectric Effect For Non-Volatile Nanoferroelectric Devices

Van der Waals engineering of ferroelectric heterostructures for long-retention memory

A New Opportunity for the Emerging Tellurium Semiconductor: Making Resistive Switching Devices.

Ferroelastic-strain-induced Multiple Nonvolatile Resistance States in GeTe/Pb(Mg1/3Nb2/3)O3-PbTiO3 Heterostructures

Room-temperature Ferroelectricity and a Switchable Diode Effect in Two-Dimensional Α-In2se3 Thin Layers.