An Electrically Switchable Anti-Ferroelectric Bilayer In2Se3 Based Opto-Spintronic Device

Yaqing Yang,Liwen Zhang,Jun Chen,Xiaohong Zheng,Lei Zhang,Liantuan Xiao,Suotang Jia

DOI: https://doi.org/10.1039/d1nr00369k

IF: 6.7

2021-01-01

Nanoscale

Abstract:The spin dependent photocurrent can be generated via the photogalvanic effect and largely tuned in an anti-ferroelectric bilayer In2Se3 based opto-spintronic device.

What problem does this paper attempt to address?

An electrically switchable anti-ferroelectric bilayer In 2 Se 3 based opto-spintronic device

Yaqing Yang,Liwen Zhang,Jun Chen,Xiaohong Zheng,Lei Zhang,Liantuan Xiao,Suotang Jia

DOI: https://doi.org/10.1039/d1nr00369k

IF: 6.7

2021-01-01

Nanoscale

Abstract:The spin dependent photocurrent can be generated via the photogalvanic effect and largely tuned in an anti-ferroelectric bilayer In 2 Se 3 based opto-spintronic device.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
2D Multiferroicity with Ferroelectric Switching Induced Spin-Constrained Photoelectricity

Yilv Guo,Xing Yu,Yehui Zhang,Xiwen Zhang,Shijun Yuan,Yafei Li,Shengyuan A. Yang,Jinlan Wang

DOI: https://doi.org/10.1021/acsnano.2c04017

IF: 17.1

2022-07-12

ACS Nano

Abstract:Multiferroic materials with tunable magnetoelectric orders enable the integration of sensing, data storage, and processing into one single device. The scarcity of single-phase multiferroics spurs extensive research in pursuit of composite systems combining different types of ferroic materials. In this work, spin-constrained photoelectric memory is proposed in two-dimensional (2D) layered magnetic/ferroelectric heterostructures, holding the possibility of low-power electrical write operation and...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Tunable spin photogalvanic effect in two-dimensional van der Waals ferroelectric semiconductors with spin-orbit coupling

Shibo Fang,Min Wang,Xingyue Yang,Zongmeng Yang,Qiuhui Li,Zhaochu Luo,Jing Lu

DOI: https://doi.org/10.1103/PhysRevB.109.195202

IF: 3.7

2024-01-01

Physical Review B

Abstract:Spin photogalvanic effect is a nonlinear effect that can generate spin currents through optical excitation in intrinsic semiconductors without parity inversion symmetry. The efficient control of the spin photogalvanic effect is of great significance for the research of computing -in -memory devices. In this work, we investigate the ferroelectric modulation of the spin photogalvanic effect in two-dimensional (2D) van der Waals (vdW) ferroelectric semiconductors with spin -orbit coupling, including the in -plane, out -of -plane, and in-plane/outof-plane-coupled ferroelectrics. We provide the general form of the spin photogalvanic effect controlled by ferroelectricity in 2D vdW spin -orbit coupling ferroelectric semiconductors by the second -order perturbation theory. In the in -plane ferroelectrics excited by circularly polarized light, we discover an effect where the reversal of the ferroelectric polarization will maintain the spin current unchanged but change the direction of the charge current. We name this effect the hidden spin current modulation. Using first -principles quantum transport simulation, we validate our theory with three cases of the black phosphorus -like Bi (in -plane ferroelectric), monolayer alpha -GeTe (out -of -plane ferroelectric), and alpha -In 2 Se 3 (in -plane and out -of -plane coupled ferroelectric). Our study paves the way for the research of next -generation low -dimensional computing -in -memory devices.
Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Jianghong Wu,Yuting Ye,Jialing Jian,Xiaoping Yao,Junying Li,Bo Tang,Hui Ma,Maoliang Wei,Wenbin Li,Hongtao Lin,Lan Li

DOI: https://doi.org/10.1021/acs.nanolett.3c01247

IF: 10.8

2023-01-01

Nano Letters

Abstract:Two-dimensional In2Se3, an unconventional phase-change material, has drawn considerable attention for polymorphic phase transitions and electronic device applications. However, its reversible thermally driven phase transitions and potential use in photonic devices have yet to be explored. In this study, we observe the thermally driven reversible phase transitions between α and β' phases with the assistance of local strain from surface wrinkles and ripples, as well as reversible phase changes within the β phase family. These transitions lead to changes in the refractive index and other optoelectronic properties with minimal optical loss at telecommunication bands, which are crucial in integrated photonic applications such as postfabrication phase trimming. Additionally, multilayer β'-In2Se3 working as a transparent microheater proves to be a viable option for efficient thermo-optic modulation. This prototype design for layered In2Se3 offers immense potential for integrated photonics and paves the way for multilevel, nonvolatile optical memory applications.
Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

Chaojie Cui,Wei-Jin Hu,Xingxu Yan,Christopher Addiego,Wenpei Gao,Yao Wang,Zhe Wang,Linze Li,Yingchun Cheng,Peng Li,Xixiang Zhang,Husam N Alshareef,Tom Wu,Wenguang Zhu,Xiaoqing Pan,Lain-Jong Li

DOI: https://doi.org/10.1021/acs.nanolett.7b04852

IF: 10.8

2018-01-01

Nano Letters

Abstract:Enriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intralayer ferroelectricity in two-dimensional (2D) van der Waals layered alpha-In2Se3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In2Se3 exhibits intrinsically inter correlated out-of-plane and in-plane polarization, where the reversal. of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. On the basis of the in-plane switchable diode effect and the narrow bandgap (similar to 1.3 eV) of ferroelectric In2Se3, a prototypical nonvolatile memory, device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.
Sliding Ferroelectricity Induced Ultrafast Switchable Photovoltaic Response in ε‐InSe Layers

Yufan Wang,Zhouxiaosong Zeng,Zhiqiang Tian,Cheng Li,Kai Braun,Lanyu Huang,Yang Li,Xinyi Luo,Jiali Yi,Guangcheng Wu,Guixian Liu,Dong Li,Yu Zhou,Mingxing Chen,Xiao Wang,Anlian Pan

DOI: https://doi.org/10.1002/adma.202410696

IF: 29.4

2024-09-16

Advanced Materials

Abstract:This work demonstrates the odd‐even layer‐dependence of out‐of‐plane ferroelectricity in ε‐InSe. The device based on the ε‐InSe achieves an on/off ratio of 104 in ferroelectric tunneling junction and ultrafast bulk photovoltaic response in photodetector in the near‐infrared band. Moreover, the photoresponse in ε‐InSe can even exceed graphene in the same conditions, confirming the possibility of application in multifunctional devices. 2D sliding ferroelectric semiconductors have greatly expanded the ferroelectrics family with the flexibility of bandgap and material properties, which hold great promise for ultrathin device applications that combine ferroelectrics with optoelectronics. Besides the induced different resistance states for non‐volatile memories, the switchable ferroelectric polarizations can also modulate the photogenerated carriers for potentially ultrafast optoelectronic devices. Here, it is demonstrated that the room temperature sliding ferroelectricity can be used for ultrafast switchable photovoltaic response in ε‐InSe layers. By first‐principles calculations and experimental characterizations, it is revealed that the ferroelectricity with out‐of‐plane (OOP) polarization only exists in even layer ε‐InSe. The ferroelectricity is also demonstrated in ε‐InSe‐based vertical devices, which exhibit high on‐off ratios (≈104) and non‐volatile storage capabilities. Moreover, the OOP ferroelectricity enables an ultrafast (≈3 ps) bulk photovoltaic response in the near‐infrared band, rendering it a promising material for self‐powered reconfigurable and ultrafast photodetector. This work reveals the essential role of ferroelectric polarization on the photogenerated carrier dynamics and paves the way for hybrid multifunctional ferroelectric and optoelectronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Room-temperature Ferroelectricity and a Switchable Diode Effect in Two-Dimensional Α-In2se3 Thin Layers.

Siyuan Wan,Yue Li,Wei Li,Xiaoyu Mao,Wenguang Zhu,Huating Zeng

DOI: https://doi.org/10.1039/c8nr04422h

IF: 6.7

2018-01-01

Nanoscale

Abstract:Nanoscale room-temperature ferroelectricity is ideal for developing advanced non-volatile high-density memories. However, reaching the thin film limit in conventional ferroelectrics is a long-standing challenge due to the presence of the critical thickness effect. van der Waals materials, thanks to their stable layered structure, saturated interfacial bonding and weak interlayer couplings, are promising for exploring ultra-thin two-dimensional (2D) ferroelectrics and device applications. Here, we demonstrate a switchable room-temperature ferroelectric diode built upon a 2D ferroelectric α-In2Se3 layer as thin as 5 nm in the form of a graphene/α-In2Se3 heterojunction. The intrinsic out-of-plane ferroelectricity of the α-In2Se3 thin layers is evidenced by the observation of reversible spontaneous electric polarization with a relatively low coercive electric field of ∼2 × 105 V cm-1 and a typical ferroelectric domain size of around tens μm2. Owing to the out-of-plane ferroelectricity of the α-In2Se3 layer, the Schottky barrier at the graphene/α-In2Se3 interface can be effectively tuned by switching the electric polarization with an applied voltage, leading to a pronounced switchable double diode effect with an on/off ratio of ∼105. Our results offer a new way for developing novel nanoelectronic devices based on 2D ferroelectrics.
Ferroelectric control of single-molecule magnetism in 2D limit

Xinwei Wang,Chengcheng Xiao,Chao Yang,Miaogen Chen,Shengyuan A Yang,Jun Hu,Zhaohui Ren,Hui Pan,Wenguang Zhu,Zhu-An Xu,Yunhao Lu,Shengyuan A. Yang

DOI: https://doi.org/10.1016/j.scib.2020.04.014

IF: 18.9

2020-08-01

Science Bulletin

Abstract:The electric control of magnetic properties based on magnetoelectric effect is crucial for the development of future data storage devices. Here, based on first-principles calculations, a strong magnetoelectric effect is proposed to effectively switch on/off the magnetic states as well as alter the in-plane/perpendicular easy axes of metal-phthalocyanine molecules (MPc) by reversing the electric polarization of the underlying 2D ferroelectric α-In2Se3 substrate with the application of an external electric field. The mechanism originates from the different hybridization between the molecule and the ferroelectric substrate in which the different electronic states of surface Se layer play a dominant role. Moreover, the magnetic moments and magnetocrystalline anisotropy energies (MAE) of OsPc/In2Se3 can be further largely enhanced by a functionalized atom atop the OsPc molecule. The I-OsPc/In2Se3 system possesses large MAE up to 30 meV at both polarization directions, which is sufficient for room-temperature applications. These findings provide a feasible scheme to realize ferroelectric control of magnetic states in 2D limit, which have great potential for applications in nanoscale electronics and spintronics.

multidisciplinary sciences
Domain nucleation kinetics and polarization-texture-dependent electronic properties in two-dimensional α-In2Se3 ferroelectrics

Yanan Lu,Liqin Su,Linghui Fang,Qingyuan Luo,Meiying Gong,Dan Cao,Xiaoshuang Chen,Xiaowen Shi,Haibo Shu

DOI: https://doi.org/10.1039/d3nr03166g

IF: 6.7

2023-11-01

Nanoscale

Abstract:Two-dimensional (2D) ferroelectric semiconductors such as α-In2Se3 with switchable spontaneous polarization and superior optoelectronic properties exhibit large potential for functional device applications. The electric transport properties and device performance of 2D α-In2Se3 are strongly sensitive to the ferroelectric domain structures and polarization textures, but they are sacredly explored at the atomic scale. Herein, by a combination of first-principles calculations and a developed domain switching theory, we report the domain nucleation kinetics and polarization-texture dependent electronic properties in α-In2Se3 ferroelectrics. Our calculated results reveal that the reversed domains characterized by armchair boundaries tend to form triangular or stripped shape. The energy barrier for propagating domain boundaries is ~1.42 eV and can be reduced by loading external electric field, which is responsible for driving the evolution of domain structures. Moreover, the domain switching leads to notable changes in the band gap and carrier spatial distribution of α-In2Se3 monolayer, resulting in higher electric resistance of multi-polarization domain structures than that of single-polarization state. The domain structures of multilayer α-In2Se3 follow a layer-by-layer switching mechanism, which causes the transition of electronic structures from self-doped p-n junctions to type-II semiconductor homojunctions. This work not only provides an in-depth insight into domain switching mechanisms of α-In2Se3 but also opens up the possibility to tailor their electronic and transport properties.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Reversible and nonvolatile manipulation of the spin-orbit interaction in ferroelectric field-effect transistors based on a two-dimensional bismuth oxychalcogenide

Ming-Yuan Yan,Shuang-Shuang Li,Jian-Min Yan,Li Xie,Meng Xu,Lei Guo,Shu-Juan Zhang,Guan-Yin Gao,Fei-Fei Wang,Shan-Tao Zhang,Xiaolin Wang,Yang Chai,Weiyao Zhao,Ren-Kui Zheng

DOI: https://doi.org/10.1103/PhysRevApplied.18.044073

2023-07-25

Abstract:Spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spin polarization through utilizing an electric field. Electrically tunable SOI through electrostatic gates have been investigated, however, the relatively weak and volatile tunability limit its practical applications in spintronics. Here, we demonstrate the nonvolatile electric-field control of SOI via constructing ferroelectric Rashba architectures, i.e., 2D Bi2O2Se/PMN-PT ferroelectric field effect transistors. The experimentally observed weak antilocalization (WAL) cusp in Bi2O2Se films implies the Rashba-type SOI that arises from asymmetric confinement potential. Significantly, taking advantage of the switchable ferroelectric polarization, the WAL-to-weak localization (WL) transition trend reveals the competition between spin relaxation and dephasing process, and the variation of carrier density leads to a reversible and nonvolatile modulation of spin relaxation time and spin splitting energy of Bi2O2Se films by this ferroelectric gating. Our work provides a scheme to achieve nonvolatile control of Rashba SOI with the utilization of ferroelectric remanent polarization.

Materials Science,Applied Physics
Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Liyi Bai,Changming Ke,Zhongshen Luo,Tianyuan Zhu,Lu You,Shi Liu

DOI: https://doi.org/10.1021/acsnano.4c06619

IF: 17.1

2024-09-15

ACS Nano

Abstract:Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, α-In2Se3, known for its electrically addressable vertical polarization, has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in single-domain α-In2Se3. The processes of vertical polarization switching in monolayer α-In2Se3 are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of α-In2Se3, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.
Optoelectronic Coincidence Detection With Two-Dimensional Bi2o2se Ferroelectric Field-Effect Transistors

Jian-Min Yan,Jing-Shi Ying,Ming-Yuan Yan,Zhao-Cai Wang,Shuang-Shuang Li,Ting-Wei Chen,Guan-Yin Gao,Fuyou Liao,Hao-Su Luo,Tao Zhang,Yang Chai,Ren-Kui Zheng

DOI: https://doi.org/10.1002/adfm.202103982

IF: 19

2021-01-01

Advanced Functional Materials

Abstract:Information processing with optoelectronic devices provides an alternative way to efficiently process hybrid optical and electronic signals. Ferroelectric field-effect transistors (FeFETs) can effectively respond to external optical and electrical stimuli by modulating their polarization states. Here, a 2D FeFET is demonstrated by the epitaxial growth of high-quality 2D bismuth layered oxyselenide (Bi2O2Se) films on PMN-PT(001) ferroelectric single-crystal substrates. Upon switching the polarization direction of PMN-PT, the authors realize in situ, reversible, and nonvolatile manipulation of the resistance of Bi2O2Se thin film (approximate to 877%). The device simultaneously exhibits a polarization-dependent photoresponse through visible light (lambda = 405 nm) and infrared light (IR, lambda = 980 nm) illumination. Combining optical stimuli with ferroelectric gating, it is demonstrated that the devices not only show nonvolatile memory and optoelectronic responses, but also show coincidence detection of visible and IR light. This work holds great potential in constructing new multiresponse and multifunction 2D-FeFETs.
Electric Control of Helicity-Dependent Photocurrent and Surface Polarity Detection on Two-Dimensional Bi2O2Se Nanosheets.

Wenyi Wu,Jinling Yu,Yong-Hai Chen,Yu Liu,Shuying Cheng,Yunfeng Lai,Jie Sun,Hai Zhou,Ke He

DOI: https://doi.org/10.1021/acsnano.3c02812

IF: 17.1

2023-01-01

ACS Nano

Abstract:Bismuth oxyselenide (Bi2O2Se) is a two-dimensional (2D) layered semiconductor material with high electron Hall mobility and excellent environmental stability as well as strong spin-orbit interaction (SOI), which has attracted intense attention for application in spintronic and spin optoelectronic devices. However, a comprehensive study of spin photocurrent and its microscopic origin in Bi2O2Se is still missing. Here, the helicity-dependent photocurrent (HDPC) was investigated in Bi2O2Se nanosheets. By analyzing the dependence of HDPC on the angle of incidence, we find that the HDPC originates from surface states with Cs symmetry in Bi2O2Se, which can be attributed to the circular photogalvanic effect (CPGE) and circular photon drag effect (CPDE). It is revealed that the HDPC current almost changes linearly with the source-drain voltage. Furthermore, we demonstrate effective tuning of HDPC in Bi2O2Se by ionic liquid gating, indicating that the spin splitting of the surface electronic structure is effectively tuned. By analyzing the gate voltage dependence of HDPC, we can unambiguously identify the surface polarity and the surface electronic structure of Bi2O2Se. The large HDPC in Bi2O2Se nanosheets and its efficient electrical tuning demonstrate that 2D Bi2O2Se nanosheets may provide a good platform for opto-spintronics devices.
Room-temperature Electrically Switchable Spin–valley Coupling in a Van Der Waals Ferroelectric Halide Perovskite with Persistent Spin Helix

Lifu Zhang,Jie Jiang,Christian Multunas,Chen Ming,Zhizhong Chen,Yang Hu,Zonghuan Lu,Saloni Pendse,Ru Jia,Mani Chandra,Yi-Yang Sun,Toh-Ming Lu,Yuan Ping,Ravishankar Sundararaman,Jian Shi

DOI: https://doi.org/10.1038/s41566-022-01016-9

IF: 35

2022-01-01

Nature Photonics

Abstract:Spintronic devices, by harnessing the spin degree of freedom, are expected to outperform charge-based devices in terms of energy efficiency and speed of operation. The use of an electric field to control spin at room temperature has been pursued for decades. A major hurdle that has contributed to the slow progress in this regard is the dilemma between effective control and strong spin relaxation. For example, in a Rashba/Dresselhaus material with strong spin–orbit coupling, although the internal magnetic field could be substantial enough to effectively control spin precession, often, the spin-relaxation time becomes extremely short as a consequence of Dyakonov–Perel scattering. To address this, a persistent spin helix has been proposed in systems with SU(2) symmetry. Here we show the discovery of the persistent spin helix in an organic–inorganic hybrid ferroelectric halide perovskite whose layered nature makes it intrinsically like a quantum well. We demonstrate that the spin-polarized band structure is switchable at room temperature via an intrinsic ferroelectric field. We reveal valley–spin coupling through a circular photogalvanic effect in single-crystalline bulk crystals. The favoured short spin helix wavelength (three orders of magnitude shorter than in III–V materials), room-temperature operation and non-volatility make the hybrid perovskite an ideal platform for understanding symmetry-tuned spin dynamics, towards designing practical spintronic materials and devices that can resolve the control-relaxation dilemma.
A chiral switchable photovoltaic ferroelectric 1D perovskite.

Yang Hu,Fred Florio,Zhizhong Chen,W Adam Phelan,Maxime A Siegler,Zhe Zhou,Yuwei Guo,Ryan Hawks,Jie Jiang,Jing Feng,Lifu Zhang,Baiwei Wang,Yiping Wang,Daniel Gall,Edmund F Palermo,Zonghuan Lu,Xin Sun,Toh-Ming Lu,Hua Zhou,Yang Ren,Esther Wertz,Ravishankar Sundararaman,Jian Shi

DOI: https://doi.org/10.1126/sciadv.aay4213

IF: 13.6

2020-01-01

Science Advances

Abstract:Spin and valley degrees of freedom in materials without inversion symmetry promise previously unknown device functionalities, such as spin-valleytronics. Control of material symmetry with electric fields (ferroelectricity), while breaking additional symmetries, including mirror symmetry, could yield phenomena where chirality, spin, valley, and crystal potential are strongly coupled. Here we report the synthesis of a halide perovskite semiconductor that is simultaneously photoferroelectricity switchable and chiral. Spectroscopic and structural analysis, and first-principles calculations, determine the material to be a previously unknown low-dimensional hybrid perovskite (R)-(-)-1-cyclohexylethylammonium/(S)-(+)-1 cyclohexylethylammonium) PbI3. Optical and electrical measurements characterize its semiconducting, ferroelectric, switchable pyroelectricity and switchable photoferroelectric properties. Temperature dependent structural, dielectric and transport measurements reveal a ferroelectric-paraelectric phase transition. Circular dichroism spectroscopy confirms its chirality. The development of a material with such a combination of these properties will facilitate the exploration of phenomena such as electric field and chiral enantiomer-dependent Rashba-Dresselhaus splitting and circular photogalvanic effects.
Intrinsic Ferroelectric Switching in Two-Dimensional α-In 2 Se 3

Liyi Bai,Changming Ke,Zhongshen Luo,Tianyuan Zhu,Lu You,Shi Liu

DOI: https://doi.org/10.1021/acsnano.4c06619

IF: 17.1

2024-09-16

ACS Nano

Abstract:Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, α-In(2)Se(3), known for its electrically addressable vertical polarization, has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Electrically switchable anisotropic polariton propagation in a ferroelectric van der Waals semiconductor

Yue Luo,Nannan Mao,Dapeng Ding,Ming-Hui Chiu,Xiang Ji,Kenji Watanabe,Takashi Taniguchi,Vincent Tung,Hongkun Park,Philip Kim,Jing Kong,William L Wilson

DOI: https://doi.org/10.1038/s41565-022-01312-z

Abstract:Tailoring of the propagation dynamics of exciton-polaritons in two-dimensional quantum materials has shown extraordinary promise to enable nanoscale control of electromagnetic fields. Varying permittivities along crystal directions within layers of material systems, can lead to an in-plane anisotropic dispersion of polaritons. Exploiting this physics as a control strategy for manipulating the directional propagation of the polaritons is desired and remains elusive. Here we explore the in-plane anisotropic exciton-polariton propagation in SnSe, a group-IV monochalcogenide semiconductor that forms ferroelectric domains and shows room-temperature excitonic behaviour. Exciton-polaritons are launched in SnSe multilayer plates, and their propagation dynamics and dispersion are studied. This propagation of exciton-polaritons allows for nanoscale imaging of the in-plane ferroelectric domains. Finally, we demonstrate the electric switching of the exciton-polaritons in the ferroelectric domains of this complex van der Waals system. The study suggests that systems such as group-IV monochalcogenides could serve as excellent ferroic platforms for actively reconfigurable polaritonic optical devices.
Switchable Enhanced Spin Photocurrent In Rashba And Cubic Dresselhaus Ferroelectric Semiconductors

Ruixiang Fei,Shuaiqin Yu,Yan Lu,Linghan Zhu,Li Yang

DOI: https://doi.org/10.1021/acs.nanolett.1c00116

IF: 10.8

2021-01-01

Nano Letters

Abstract:Generating and controlling spin current (SC) are of central interest in spin physics and applications. To date, the spin-orbit interaction (SOI) is an established pathway to generate SC through the spin-charge current conversion. We predict an efficient spin-light conversion via the Rashba and higher-order cubic Dresselhaus SOIs in ferroelectrics. Different from the known Edelstein effect, where SC is created by the nonequilibrium spin density, our predicted spin-polarized current is from direct interactions between light and unique spin textures generated by SOI in ferroelectrics. Using first-principles simulations, we demonstrate these concepts by calculating the DC spin photo-current in a prototypical Rashba ferroelectric, alpha-GeTe. The photoinduced SC is about 2 orders of magnitude larger than the charge photocurrent. More importantly, we can conveniently switch the direction of SC by an applied electric field via inverting the spin textures. These predictions give hope to generating and controlling light-driven SC via a nonvolatile electric field.
Electrically Tunable Antiferroelectric to Paraelectric Switching in a Semiconductor

Hui Bai,Xianli Su,Qingjie Zhang,Ctirad Uher,Xinfeng Tang,Jinsong Wu

DOI: https://doi.org/10.1021/acs.nanolett.2c00787

IF: 10.8

2022-05-13

Nano Letters

Abstract:The monoclinic α-Cu2Se phase is the first multipolar antiferroelectric semiconductor identified recently by electron microscopy. As a semiconductor, although there are no delocalized electrons to form a static macroscopic polarization, a spontaneous and localized antiferroelectric polarization was found along multiple directions. In conventional ferroelectrics, the polarity can be switched by an applied electric field, and a ferroelectric to paraelectric transition can be modulated by temperature. Here, we show that a reversible and robust antiferroelectric to paraelectric switching in a Cu2Se semiconductor can be tuned electrically by low-voltage and high-frequency electric pulses, and the structural transformations are imaged directly by transmission electron microscopy (TEM). The atomic mechanism of the transformation was assigned to an electrically triggered cation rearrangement with a low-energy barrier. Due to differences of the antiferroelectric and paraelectric phases regarding their electrical, mechanical, and optical properties, such an electrically tunable transformation has a great potential in various applications in microelectronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Modulated Optical and Ferroelectric Properties in a Lateral Structured Ferroelectric/semiconductor Van Der Waals Heterojunction

Shanshan Chen,Xinhao Zhang,Guangcan Wang,Shuo Chen,Heqi Ma,Tianyu Sun,Baoyuan Man,Cheng Yang

DOI: https://doi.org/10.1088/1674-1056/acc7fa

2023-01-01

Abstract:Modulation between optical and ferroelectric properties was realized in a lateral structured ferroelectric CuInP2S6(CIPS)/semiconductor MoS2 van der Waals heterojunction.The ferroelectric hysteresis loop area was modulated by the optical field.Two types of photodetection properties can be realized in a device by changing the ON and OFF states of the ferroelectric layer.The device was used as a photodetector in the OFF state but not in the ON state.The higher tunnelling electroresistance(～1.4 × 104)in a lateral structured ferroelectric tunnelling junction was crucial,and it was analyzed and modulated by the barrier height and width of the ferroelectric CIPS/semiconductor MoS2 Schottky junction.The new parameter of the ferroelectric hysteresis loop area as a function of light intensity was introduced to analyze the relationship between the ferroelectric and photodetection properties.The proposed device has potential application as an optoelectronic sensory cell in the biological nervous system or as a new type of photodetector.

An Electrically Switchable Anti-Ferroelectric Bilayer In2Se3 Based Opto-Spintronic Device

An electrically switchable anti-ferroelectric bilayer In 2 Se 3 based opto-spintronic device

2D Multiferroicity with Ferroelectric Switching Induced Spin-Constrained Photoelectricity

Tunable spin photogalvanic effect in two-dimensional van der Waals ferroelectric semiconductors with spin-orbit coupling

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

Sliding Ferroelectricity Induced Ultrafast Switchable Photovoltaic Response in ε‐InSe Layers

Room-temperature Ferroelectricity and a Switchable Diode Effect in Two-Dimensional Α-In2se3 Thin Layers.

Ferroelectric control of single-molecule magnetism in 2D limit

Domain nucleation kinetics and polarization-texture-dependent electronic properties in two-dimensional α-In2Se3 ferroelectrics

Reversible and nonvolatile manipulation of the spin-orbit interaction in ferroelectric field-effect transistors based on a two-dimensional bismuth oxychalcogenide

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Optoelectronic Coincidence Detection With Two-Dimensional Bi2o2se Ferroelectric Field-Effect Transistors

Electric Control of Helicity-Dependent Photocurrent and Surface Polarity Detection on Two-Dimensional Bi2O2Se Nanosheets.

Room-temperature Electrically Switchable Spin–valley Coupling in a Van Der Waals Ferroelectric Halide Perovskite with Persistent Spin Helix

A chiral switchable photovoltaic ferroelectric 1D perovskite.

Intrinsic Ferroelectric Switching in Two-Dimensional α-In 2 Se 3

Electrically switchable anisotropic polariton propagation in a ferroelectric van der Waals semiconductor

Switchable Enhanced Spin Photocurrent In Rashba And Cubic Dresselhaus Ferroelectric Semiconductors

Electrically Tunable Antiferroelectric to Paraelectric Switching in a Semiconductor

Modulated Optical and Ferroelectric Properties in a Lateral Structured Ferroelectric/semiconductor Van Der Waals Heterojunction