Abstract:This work demonstrates the odd‐even layer‐dependence of out‐of‐plane ferroelectricity in ε‐InSe. The device based on the ε‐InSe achieves an on/off ratio of 104 in ferroelectric tunneling junction and ultrafast bulk photovoltaic response in photodetector in the near‐infrared band. Moreover, the photoresponse in ε‐InSe can even exceed graphene in the same conditions, confirming the possibility of application in multifunctional devices. 2D sliding ferroelectric semiconductors have greatly expanded the ferroelectrics family with the flexibility of bandgap and material properties, which hold great promise for ultrathin device applications that combine ferroelectrics with optoelectronics. Besides the induced different resistance states for non‐volatile memories, the switchable ferroelectric polarizations can also modulate the photogenerated carriers for potentially ultrafast optoelectronic devices. Here, it is demonstrated that the room temperature sliding ferroelectricity can be used for ultrafast switchable photovoltaic response in ε‐InSe layers. By first‐principles calculations and experimental characterizations, it is revealed that the ferroelectricity with out‐of‐plane (OOP) polarization only exists in even layer ε‐InSe. The ferroelectricity is also demonstrated in ε‐InSe‐based vertical devices, which exhibit high on‐off ratios (≈104) and non‐volatile storage capabilities. Moreover, the OOP ferroelectricity enables an ultrafast (≈3 ps) bulk photovoltaic response in the near‐infrared band, rendering it a promising material for self‐powered reconfigurable and ultrafast photodetector. This work reveals the essential role of ferroelectric polarization on the photogenerated carrier dynamics and paves the way for hybrid multifunctional ferroelectric and optoelectronic devices.

An electrically switchable anti-ferroelectric bilayer In 2 Se 3 based opto-spintronic device

An Electrically Switchable Anti-Ferroelectric Bilayer In2Se3 Based Opto-Spintronic Device

2D Multiferroicity with Ferroelectric Switching Induced Spin-Constrained Photoelectricity

Tunable spin photogalvanic effect in two-dimensional van der Waals ferroelectric semiconductors with spin-orbit coupling

Ferroelectric control of single-molecule magnetism in 2D limit

Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3.

Sliding Ferroelectricity Induced Ultrafast Switchable Photovoltaic Response in ε‐InSe Layers

Reversible and nonvolatile manipulation of the spin-orbit interaction in ferroelectric field-effect transistors based on a two-dimensional bismuth oxychalcogenide

A chiral switchable photovoltaic ferroelectric 1D perovskite.

Optoelectronic Coincidence Detection With Two-Dimensional Bi2o2se Ferroelectric Field-Effect Transistors

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Room-temperature Ferroelectricity and a Switchable Diode Effect in Two-Dimensional Α-In2se3 Thin Layers.

Electrically switchable anisotropic polariton propagation in a ferroelectric van der Waals semiconductor

Room-temperature Electrically Switchable Spin–valley Coupling in a Van Der Waals Ferroelectric Halide Perovskite with Persistent Spin Helix

Modulated Optical and Ferroelectric Properties in a Lateral Structured Ferroelectric/semiconductor Van Der Waals Heterojunction

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Electrically Tunable Antiferroelectric to Paraelectric Switching in a Semiconductor

Nonvolatile ferroelectric control of topological states in two-dimensional heterostructures

Domain nucleation kinetics and polarization-texture-dependent electronic properties in two-dimensional α-In2Se3 ferroelectrics

Dual Breaking of Molecular Orbitals and Spatial Symmetry in an Optically Controlled Ferroelectric

Nonvolatile ferroelectric control of topological states in 2D heterostructures