Abstract:Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, α-In2Se3, known for its electrically addressable vertical polarization, has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in single-domain α-In2Se3. The processes of vertical polarization switching in monolayer α-In2Se3 are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of α-In2Se3, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.

Electrically Tunable Antiferroelectric to Paraelectric Switching in a Semiconductor

Ferroelectric Domain and Switching Dynamics in Curved In2Se3: First-Principles and Deep Learning Molecular Dynamics Simulations.

Electroresistance in multipolar antiferroelectric Cu2Se semiconductor

Phase and Polarization Modulation in Two-Dimensional In2Se3 Via in Situ Transmission Electron Microscopy

Flexoelectric Engineering of Van Der Waals Ferroelectric CuInP2S6.

Nonvolatile Electric Control of Exciton Complexes in Monolayer MoSe<sub>2</sub> with Two-Dimensional Ferroelectric CuInP<sub>2</sub>S<sub>6</sub>

Nonvolatile Electric Control of Exciton Complexes in Monolayer MoSe 2 with Two-Dimensional Ferroelectric CuInP 2 S 6

Ferroelectrically tunable topological phase transition in In$_2$Se$_3$ thin films

Ferroelectric control of single-molecule magnetism in 2D limit

An Electrically Switchable Anti-Ferroelectric Bilayer In2Se3 Based Opto-Spintronic Device

Reducing Threshold of Ferroelectric Domain Switching in Ultrathin Two-Dimensional CuInP2S6 Ferroelectrics Via Electrical-Mechanical Coupling.

Unconventional ferroelectric domain switching dynamics in CuInP2S6 from first principles

Atomic Insight into the Successive Antiferroelectric-Ferroelectric Phase Transition in Antiferroelectric Oxides

An electrically switchable anti-ferroelectric bilayer In 2 Se 3 based opto-spintronic device

Direct measurement of ferroelectric polarization in a tunable semimetal

Atomic Imaging of Electrically Switchable Striped Domains in β ′‐In 2 Se 3

Achieving ferroelectricity in a centrosymmetric high-performance semiconductor by strain engineering

Ferroelectric switching of a two-dimensional metal

Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

Nonvolatile Multiferroic Coupling in Van Der Waals Heterostructure

High Thermoelectric and Reversible P-N-p Conduction Type Switching Integrated in Dimetal Chalcogenide.