Abstract:A WS2/CuInP2S6 heterostructure is fabricated in such a way that screening charges of opposite signs are supplied to WS2 monolayers by the residual polarization of ferroelectric CuInP2S6 regions with antiparallel orientations. This significantly modifies the proportion of negatively charged trions to neutral excitons in the direct‐gap semiconductor's recombination luminescence, providing a feasible method for non‐volatile, controlled modulation in 2D systems. The integration of 2D ferroelectric materials with 2D photoelectric materials presents a promising avenue for addressing issues related to controlled doping and device integration in layered semiconductors. The reversible and non‐volatile residual polarization inherent to ferroelectrics can provide stable n‐ or p‐type doping for 2D semiconductors. Despite advances in doping strategies for 2D materials, existing techniques, and post‐doping characterization methodologies exhibit limitations, including the challenge of achieving high‐resolution graphical depictions of doped structures. Here, a WS2/CuInP2S6 heterostructure is demonstarted whereby the residual polarization of ferroelectric CuInP2S6 regions with anti‐parallel directions supplies screening charges of opposite signs to WS2 monolayers. This notably alters the ratio of neutral excitons and negatively charged trions within the recombination luminescence of the direct‐gap semiconductor, thereby offering a viable approach for controllable, non‐volatile modulation in 2D systems. Beyond proposing a feasible strategy for patterned doping and effective regulation in 2D semiconductors through interface engineering, this work enhances the understanding of the interplay between ferroelectrics and semiconductors.

Modulated Optical and Ferroelectric Properties in a Lateral Structured Ferroelectric/semiconductor Van Der Waals Heterojunction

Two dimensional CuInP2S6/h-BN/MoTe2 van der Waals heterostructure phototransistor with double gate control

Ferroelectric Polarization‐Mediated Modulation of Optical Properties in 2D van der Waals Architectures

Bulk photovoltaic and photoconductivity effects in two-dimensional ferroelectric CuInP2S6 based heterojunctions

Ferroelectric-tuned Van Der Waals Heterojunction with Band Alignment Evolution

Spatially Resolved Light-Induced Ferroelectric Polarization in α-In2Se3/Te Heterojunctions

Ferroelectric enhanced Van der Waals heterojunction polarization detector

Flexoelectric Engineering of Van Der Waals Ferroelectric CuInP2S6.

Ion migration induced bipolar diode effect and ferroelectricity modulation in CuInP2S6

Nonvolatile Electric Control of Exciton Complexes in Monolayer MoSe 2 with Two-Dimensional Ferroelectric CuInP 2 S 6

Switchable Photovoltaic Effect and Robust Nonlinear Optical Response in a High-Temperature Molecular Ferroelectric [C8N2H22][PbI4]

Giant Modulation of Second-Harmonic Generation in CuInP 2 S 6 by Interfacing with MoS 2 Atomic Layers

Ideal Photodetector Based on WS 2 /CuInP 2 S 6 Heterostructure by Combining Band Engineering and Ferroelectric Modulation

Light-Tunable Polarity and Erasable Physisorption-Induced Memory Effect in Vertically Stacked InSe/SnS 2 Self-Powered Photodetector

Polarization photodetectors with configurable polarity transition enabled by programmable ferroelectric-doping patterns

Two-Dimensional Ferroelectric C2N/In2Se3 Heterobilayer with Tunable Electronic Property and Photovoltaic Effect

Electrically tunable interlayer recombination and tunneling behavior in WSe2/MoS2 heterostructure for broadband photodetector

Selective Enhancement of Photoresponse with Ferroelectric‐Controlled BP/In2Se3 Vdw Heterojunction

Lateral Multilayer/monolayer MoS2 Heterojunction for High Performance Photodetector Applications

Ferroelectric Polarization Enhanced Optoelectronic Synaptic Response of a CuInP2S6 Transistor Structure

Tunable WSe2-MoSe2 Lateral Heterojunction Photodetector Based on Piezoelectric and Flexoelectric Effects.