Abstract:Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant computing technologies. However, it remains elusive about how to develop topological edge state-based computing devices. Recently, exploration and understanding of interfacial ferroelectricity in various van der Waals heterostructure material systems have received widespread attention among the community of materials science and condensed matter physics3-11. Such ferroelectric polarization emergent at the vdW interface can coexist with other quantum states and thus provides an unprecedented opportunity to electrically switch the topological edge states of interest, which is of crucial significance to the fault-tolerant electronic device applications based on the topological edge states. Here, we report the selective and quasi-continuous ferroelectric switching of topological Chern insulator devices and demonstrate its promising application in noise-immune neuromorphic computing. We fabricate this ferroelectric Chern insulator device by encapsulating magic-angle twisted bilayer graphene with doubly-aligned h-BN layers, and observe the coexistence of the interfacial ferroelectricity and the topological Chern insulating states. This ferroelectricity exhibits an anisotropic dependence on the in-plane magnetic field. By using a VBG pulse with delicately controlled amplitude, we realize the nonvolatile switching between any pair of Chern insulating states and achieve 1280 distinguishable nonvolatile resistance levels on a single device. Furthermore, we demonstrate deterministic switching between two arbitrary levels among the record-high number of nonvolatile resistance levels.

Nonvolatile ferroelectric control of topological states in two-dimensional heterostructures

Nonvolatile ferroelectric control of topological states in 2D heterostructures

Nonvolatile Electrical Control Of 2d Cr2ge2te6 And Intrinsic Half Metallicity In Multiferroic Hetero-Structures

Nonvolatile electric-field control of topological phase transition in the two-dimensional ferroelectric heterostructure

Ferroelectric Quantum Spin Hall Effect in Two-Dimensional In2TeS2

Ferroelectrically Controlled Topological Magnetic Phase in a Janus-magnet-based Multiferroic Heterostructure

Non-volatile control of topological phase transition in an asymmetric ferroelectric In2Te2S monolayer

Hole doped nonvolatile and electrically controllable magnetism in van der Waals ferroelectric heterostructures

Intertwined ferroelectricity and topological state in two-dimensional multilayer

Ferroelectrically tunable topological phase transition in In$_2$Se$_3$ thin films

Ferroelectricity controlled chiral spin textures and anomalous valley Hall effect in the Janus magnet-based multiferroic heterostructure

Nonvolatile Ferroelectric Control of Electronic Properties of Bi 2 Te 3

Nonvolatile electrical control of 2D Cr 2 Ge 2 Te 6 and intrinsic half metallicity in multiferroic hetero-structures

Ferroelectric Semimetals with α-Bi/SnSe van der Waals Heterostructures and Their Topological Currents

Electrically Tunable Topological Phase Transition in van der Waals Heterostructures

Engineering Topological Spin Hall Effect in 2D Multiferroic Material

Electric-field-modulated topological phase transition in AlSb/InSe heterobilayers

First-Principles Studies of the Tunneling Properties Through Ferroelectric/Ferromagnetic Van Der Waals Heterostructures

Electric-Field Switching of Magnetic Topological Charge in Type-I Multiferroics

Reversible doping polarity and ultrahigh carrier density in two-dimensional van der Waals ferroelectric heterostructures

Selective and Quasi-continuous Switching of Ferroelectric Chern Insulator Device for Neuromorphic Computing