Abstract:Two-dimensional (2D) ferroelectric materials have attracted increasing interest due to meeting the requirements of integration, miniaturization, and multifunction of devices. However, the exploration of intrinsic 2D ferroelectric materials is still in the early stage, for which the related reports are still limited, especially fewer ones prepared by chemical vapor deposition (CVD). Here, the ultrathin metal–tellurium–oxyhalide Cd7Te7Cl8O17 (CTCO) flakes as thin as 3.8 nm are realized via the selenium-induced selective-bonding CVD method. The growth mechanism has been confirmed by experiments and theoretical calculations, which can be ascribed to the induction of selective bonding of a hydrogen atom in H2O molecules by the introduction of selenium, leading to the generation of strong oxidants. Excitingly, switchable out-of-plane ferroelectric polarization was observed in CTCO flakes down to 6 nm at room temperature, which may be caused by mobile Cl vacancies. This work has implications for the synthesis and applications of 2D ferroelectric materials.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsnano.1c06099.Additional information on the ARPR spectroscopy of CTCO flakes, absorption spectrum, EDX, XPS spectra, comparison of different Se dosages, evaporating temperature, and water molecule absorption on CTCO growth, Raman mapping, and ferroelectric retention (PDF)This article has not yet been cited by other publications.

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