Abstract:The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.

Tuning Spin Hall Conductivity in GeTe by Ferroelectric Polarization

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Ferroelectric control of the spin texture in germanium telluride

Tuning the Interfacial Spin-Orbit Coupling with Ferroelectricity

Spin Dynamics Modulated by Rashba States in Ferroelectric α-GeTe

Tunable Ferroelectricity and Anisotropic Electric Transport in Monolayer Β-Gese

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve

Controllable spin splitting in 2D Ferroelectric few-layer ${$γ}$-GeSe

Spin scattering and Hall effects in monolayer Fe3GeTe2

Giant tunable spin Hall angle in sputtered Bi2Se3 controlled by an electric field

Giant Tunable Spin Hall Angle in Sputtered Bi 2 Se 3 Controlled by an Electric Field

Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6

Tunable Intrinsic Spin Hall Conductivity in Two-Dimensional Van Der Waals Ferroelectric WTe2

Tunable room-temperature spin galvanic and spin Hall effects in van der Waals heterostructures

Efficient spin filtering through Fe GeTe -based van der Waals heterostructures

Surface versus bulk contributions to the giant Rashba splitting in the ferroelectric {\alpha}-GeTe(111) semiconductor

High Spin Hall Conductivity in Large-Area Type-II Dirac Semimetal PtTe2.

Interfacial Crystal Hall Effect Reversible by Ferroelectric Polarization

Spin-reorientation driven emergent phases and unconventional magnetotransport in quasi-2D vdW ferromagnet Fe 4 GeTe 2

Engineering Topological Spin Hall Effect in 2D Multiferroic Material