Abstract:They developed a method to create highly efficient collinear spin currents by altering interfacial symmetry, achieving 100% field‐free switching in CoFeB multilayers. This switching, driven by a planar spin Hall effect, is facilitated by changes in interface symmetry. Their approach overcomes material symmetry limits, offering a new path for controlling spin orbit torque and advancing energy‐efficient spintronic devices. Current induced spin–orbit torque (SOT) manipulation of magnetization is pivotal in spintronic devices. However, its application for perpendicular magnetic anisotropy magnets, crucial for high‐density storage and memory devices, remains nondeterministic and inefficient. Here, a highly efficient approach is demonstrated to generate collinear spin currents by artificial modulation of interfacial symmetry, achieving 100% current‐induced field‐free SOT switching in CoFeB multilayers with perpendicular magnetization on stepped Al2O3 substrates. This field‐free switching is primarily driven by the out‐of‐plane anti‐damping SOT generated by the planar spin Hall effect (PSHE), resulting from reduced interface symmetry due to orientation‐determined steps. Microscopic theoretical analysis confirms the presence and significance of PSHE in this process. Notably, this method for generating out‐of‐plane spin polarization along the collinear direction of the spin‐current with artificial modulation of interfacial symmetry, overcomes inherent material symmetry constraints. These findings provide a promising avenue for universal control of spin–orbit torque, addressing challenges associated with low crystal symmetry and highlighting its great potential to advance the development of energy‐efficient spintronic devices technology.

Giant tunable spin Hall angle in sputtered Bi2Se3 controlled by an electric field

Giant Tunable Spin Hall Angle in Sputtered Bi 2 Se 3 Controlled by an Electric Field

High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers

Improvement of the Effective Spin Hall Angle by Inserting an Interfacial Layer in Sputtered BiSb Topological Insulator (Bottom)/Ferromagnet With In-Plane Magnetization

Tuning Spin Hall Conductivity in GeTe by Ferroelectric Polarization

Enhancing Spin–orbit Torques with a Low Voltage in Metallic Multi-Layered Heterostructures

Tuning the Interfacial Spin-Orbit Coupling with Ferroelectricity

Giant spin Hall effect with multi-directional spin components in Ni4W

Highly efficient charge-to-spin conversion from in situ Bi 2 Se 3 /Fe heterostructures

Highly Efficient Electric-Field Control of Giant Rashba Spin-Orbit Coupling in Lattice-Matched InSb/CdTe Heterostructures.

Electric manipulation of the magnetization in heterostructure Pt/Co/Bi2Se3

Giant Inverse Spin Hall Effect in Bi Doped PtBi Alloy

The Giant Inverse Spin Hall Effect in Semiconductor Alloy/Ferromagnetic Insulator (Ge 1– x Bi x /YIG) Spin Heterojunction

Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet

Electric Control of Helicity-Dependent Photocurrent and Surface Polarity Detection on Two-Dimensional Bi2O2Se Nanosheets.

Intrinsic Dynamic Generation of Spin Polarization by Time-Varying Electric Field

The Giant Inverse Spin Hall Effect in Semiconductor Alloy/Ferromagnetic Insulator (ge1–xbix/yig) Spin Heterojunction

Electric-field Control of Spin–orbit Torque in a Magnetically Doped Topological Insulator

Large Tunable Spin-to-Charge Conversion Induced by Hybrid Rashba and Dirac Surface States in Topological Insulator Heterostructures

Collinear Spin Current Induced by Artificial Modulation of Interfacial Symmetry

Control of Spin Currents and Antiferromagnetic Moments Via Topological Surface States for Ultralow Energy Consumption