Abstract:The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.

Controllable Domain Walls in Two-Dimensional Ferromagnetic Material Fe<sub>3</sub>GeTe<sub>2</sub> Based on the Spin-Transfer Torque Effect

Elevation of Domain Wall Velocity Driven by Current Pulses in 2D Ferromagnetic Material Fe3GeTe2

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Anomalous Spin Behavior In Fe3gete2 Driven By Current Pulses

Current‐Controllable and Reversible Multi‐Resistance‐State Based on Domain Wall Number Transition in 2d Ferromagnet Fe3GeTe2

Current-induced domain wall motion in a van der Waals ferromagnet Fe 3 GeTe 2

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Magnetic domain walls of the van der Waals material Fe$_3$GeTe$_2$

Direct visualization of local magnetic domain dynamics in a 2D Van der Walls material/ferromagnet interface

Field-Dependent Magnetic Domain Behavior in van der Waals Fe$_3$GeTe$_2$

Efficient domain wall motion driven by the out-of-plane spin polarization

High-Performance FexGeTe2− Based ( X =

Dynamics of domain walls motion driven by spin-orbit torque in antiferromagnets

Gate Tunable Labyrinth Domain Structures in a Van Der Waals Itinerant Ferromagnet Cr7Te8

Current-Driven Domain Wall Dynamics in Ferrimagnetic Nickel-Doped Mn4N Films: Very Large Domain Wall Velocities and Reversal of Motion Direction across the Magnetic Compensation Point

Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve

Spontaneous (Anti)meron Chains in the Domain Walls of van der Waals Ferromagnetic Fe 5− x GeTe 2

Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2

Domain walls speed up in insulating ferrimagnetic garnets

Manipulation of topological spin configuration via tailoring thickness in van der Waals ferromagnetic Fe 5 − x Ge Te 2