Abstract:A novel in situ biasing approach has facilitated atomic‐level observation of domain wall translational features in PZT/LSMO heterojunction via precise electric field control. The study uncovers a unique domain wall creeping behavior with morphology variation, driven by the competition between gradient, elastic, and electrostatic energies. These findings advance a fundamental understanding of domain wall properties and potential modulation in practical devices. As a promising candidate for next‐generation nonvolatile memory devices, ferroelectric oxide films exhibit many emergent phenomena with functional applications, making understanding polarization switching and domain evolution behaviors of fundamental importance. However, tracking domain wall motion in ferroelectric oxide films with high spatial resolution remains challenging. Here, an in situ biasing approach for direct atomic‐scale observations of domain nucleation and sideways motion is presented. By accurately controlling the applied electric field, the lateral translational speed of the domain wall can decrease to less than 2.2 Å s−1, which is observable with atomic resolution STEM imaging. In situ observations on a capacitor structured PbZr0.1Ti0.9O3/La0.7Sr0.3MnO3 heterojunction demonstrate the unique creeping behavior of a domain wall under a critical electric field, with the atomic structure of the creeping domain wall revealed. Moreover, the evolution of the metastable domain wall forms an elongated morphology, which contains a large proportion of charged segments. Phase‐field simulations unveil the competition between gradient, elastic, and electrostatic energies that decide this unique domain wall creeping and morphology variation. This work paves the way toward a complete fundamental understanding of domain wall physics and potential modulations of domain wall properties in real devices.

Tunable vertical ferroelectricity and domain walls by interlayer sliding in β-ZrI2

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Atomic-scale Mechanisms of Ferroelastic Domain-Wall-mediated Ferroelectric Switching

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

In Situ Observation of Domain Wall Lateral Creeping in a Ferroelectric Capacitor

Prediction of the two-dimensional ferromagnetic semiconductor Janus 2H-ZrTeI monolayer with large valley and piezoelectric polarizations

Vertical Ferroelectric Switching by In-Plane Sliding of Two-Dimensional Bilayer WTe2.

Ferroelectric switching at symmetry-broken interfaces by local control of dislocation networks

Mechanical Manipulation of Nano‐Twinned Ferroelectric Domain Structures for Multilevel Data Storage

Ferroelastic‐Domain‐Assisted Mechanical Switching of Ferroelectric Domains in Pb(Zr,Ti)O3 Thin Films

Phase competition and negative piezoelectricity in interlayer-sliding ferroelectric Zr I 2

Room-temperature vertical ferroelectricity in rhenium diselenide induced by interlayer sliding

Phase competition and negative piezoelectricity in interlayer-sliding ferroelectric ZrI$_2$

Ferroelastic Zr2P2XY (X/Y = I, Br, Cl or F; X ≠ Y) monolayers with tunable in-plane electronic anisotropy and remarkable out-of-plane piezoelectricity

Vertical Ferroelectricity in Van der Waals Materials: Models and Devices

Domain wall architecture in tetragonal ferroelectric thin films

Tunable Metallic Conductance in Ferroelectric Nanodomains.

Atomic-level polarization reversal in sliding ferroelectric semiconductors

Non-volatile electrical polarization switching via domain wall release in 3R-MoS$_2$ bilayer

Electric-Field-Induced Domain Walls in Wurtzite Ferroelectrics