Abstract:Wurtzite ferroelectrics possess transformative potential for next-generation microelectronics. A comprehensive understanding of their ferroelectric properties and domain energetics is crucial for tailoring their ferroelectric characteristics and exploiting their functional properties in practical devices. Despite burgeoning interest, the exact configurations, and electronic structures of the domain walls in wurtzite ferroelectrics remain elusive. In this work, we elucidate the atomic configurations and electronic properties of electric-field-induced domain walls in ferroelectric ScGaN. By combining transmission electron microscopy and theoretical calculations, a novel charged domain wall with a buckled two-dimensional hexagonal phase is revealed. The dangling bonds associated with these domain walls give rise to unprecedented metallic-like mid-gap states within the forbidden band. Quantitative analysis further unveils a universal charge-compensation mechanism stabilizing antipolar domain walls in ferroelectric materials, wherein the polarization discontinuity at the 180° domain wall is compensated by the dangling bond electrons. Furthermore, the reconfigurable conductivity of these domain walls is experimentally demonstrated, showcasing their potential for ultra-scaled device applications. Our findings represent a pivotal advancement in understanding the structural and electronic properties of wurtzite ferroelectric domain walls and lay the groundwork for fundamental physics studies and device applications.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is related to the atomic structure and electronic properties of the electric - field - induced domain walls in hexagonal nitride ferroelectric materials (such as ScGaN). Specifically, the paper aims to: 1. **Clarify atomic configurations and electronic properties**: By combining transmission electron microscopy (TEM) and theoretical calculations, reveal the atomic configurations and electronic properties of the electric - field - induced domain walls in ferroelectric ScGaN. 2. **Discover new charged domain walls**: Identify a new type of charged domain wall with a distorted two - dimensional hexagonal phase and study its unique metal - like band - gap states. 3. **Understand the charge compensation mechanism**: Through quantitative analysis, reveal a general charge compensation mechanism that stabilizes the antipolar domain walls, in which the polarization discontinuity at the 180º domain wall is compensated by dangling - bond electrons. 4. **Demonstrate reconfigurable conductivity**: Experimentally verify the reconfigurable conductivity of these domain walls, demonstrating their potential in ultra - small device applications. ### Specific problems and solutions - **Problem**: Although the interest in hexagonal nitride ferroelectric materials is growing, the exact configuration and electronic structure of domain walls remain unclear. **Solution**: Through high - resolution STEM imaging and DFT calculations, the electric - field - induced domain walls, especially the horizontal domain walls (HDWs) and vertical domain walls (VDWs), were studied in detail, and new atomic configurations and electronic properties were discovered. - **Problem**: How to explain the charge compensation mechanism within the domain walls? **Solution**: Through quantitative analysis, the interaction between dangling - bond electrons and polarization discontinuity was revealed, and a general charge compensation mechanism was proposed. - **Problem**: How to develop new nano - devices by using the special properties of domain walls? **Solution**: Experiments demonstrated the reconfigurable conductivity of domain walls, indicating that these domain walls have potential application value in next - generation nano - devices. ### Key findings - **New charged domain walls**: A new type of charged domain wall with a distorted two - dimensional hexagonal phase was discovered, in which the dangling bonds lead to unprecedented metal - like band - gap states. - **Charge compensation mechanism**: The mechanism in which dangling - bond electrons compensate for the polarization discontinuity was revealed, which is crucial for stabilizing the antipolar domain walls. - **Reconfigurable conductivity**: The reconfigurable conductivity of domain walls was experimentally verified, demonstrating its potential in ultra - small device applications. These findings provide an important basis for understanding the domain wall structures and electronic properties in hexagonal nitride ferroelectric materials and open up new avenues for future domain - wall - based nano - device design.

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