Abstract:Using machine learning methods, we explore different types of domain walls in the recently unveiled single-element ferroelectric, the bismuth monolayer [Nature 617, 67 (2023)]. Remarkably, our investigation reveals that the charged domain wall configuration exhibits lower energy compared to the uncharged domain wall structure. We also demonstrate that the experimentally discovered tail-to-tail domain wall maintains topological interfacial states caused by the change in the Z_2 number between ferroelectric and paraelectric states. Interestingly, due to the intrinsic built-in electric fields in asymmetry DW configurations, we find that the energy of topological interfacial states splits, resulting in an accidental band crossing at the Fermi level. Our study suggests that domain walls in two-dimensional bismuth hold potential as a promising platform for the development of ferroelectric domain wall devices.

What problem does this paper attempt to address?

This paper discusses the topological interface states of ferroelectric domain walls in two-dimensional bismuth (Bi) monolayers. The research team used machine learning methods to analyze different types of domain walls and found that the charged domain wall (1-xy configuration) has lower energy than the uncharged domain wall (1-yy configuration). They also confirmed the existence of topological interface states in tail-to-tail domain walls, which are caused by the change between ferroelectric and paraelectric phases induced by the Zombies effect. Due to the inherent electric field in the asymmetric domain wall (DW) configuration, the energy of these topological interface states splits, resulting in accidental band crossings at the Fermi level. The paper suggests that domain walls in two-dimensional bismuth could be a promising platform for developing high-performance ferroelectric domain wall devices. In the study, stable domain wall structures were determined using machine learning potentials (MLIP), and band structures of different configurations were calculated using ML Hamiltonian methods. The results show that the 1-xy (charged) domain wall exhibits metallic characteristics, while the 1-yy (uncharged) domain wall is an insulator. Furthermore, the observed tail-to-tail domain wall in experiments maintains the topological interface state, making it a potential candidate for ferroelectric nanoelectronics. The paper also demonstrates the topological properties of ferroelectric and paraelectric phases, indicating that two-dimensional bismuth is a trivial insulator in the ferroelectric phase and a topological insulator in the paraelectric phase. The Z2 invariant was calculated using the Wilson loop method to verify the topological phase transition between the two phases. Additionally, the stability of different domain wall structures was investigated, and the 1-xy, 1-yy, and √2-x(x-y) configurations were found to be low-energy configurations. In conclusion, this paper reveals the existence of band splitting topological interface states in two-dimensional bismuth, which is of significant importance for understanding the characteristics of ferroelectric materials and designing novel electronic devices.

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