Abstract:Large domain wall conductivity in insulating ferroelectric thin films provides a new idea for non-destructive readout of domain information of a nonvolatile ferroelectric domain wall memory. However, there are several challenges hindering its development, including the excessive leakage current and insufficient on-state read current. A lot of experimental and theoretical data have referred to the accumulation of oxygen vacancies at the domain wall regions of ferroelectric thin films as the extrinsic contribution of the wall conduction. In this work, we found that the wall current varied with the angle between the applied electric field and the initial polarization, and that the wall current could be increased to 1.9 μA for a bismuth ferrite thin-film device with the reduced oxygen vacancies in contrast to the previous value of 2 nA for the device with rich oxygen vacancies. The oxygen vacancy concentration can be controlled through the thermal annealing of the sample at two atmospheres of 5% hydrogen mixed with argon gas and pure oxygen gas. For the former, the enhanced oxygen vacancies within the annealed sample at the reduced atmosphere decreased the domain wall current by over a few orders of magnitude, in contrast to the significant enhancement of the wall current for the sample in the latter annealed at the oxidizing atmosphere. The change of oxygen vacancy concentration was implied from the Fe2+⇔Fe3+ transition by the X-ray photoelectron spectroscopy analysis. This change confirmed the rigid domain wall conduction mechanism as well as the extrinsic adverse defect compensation of the wall current, paving the way to the exploration of high-power domain-wall nanodevices with sufficient output currents.

In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Understanding and Predicting Geometrical Constraint Ferroelectric Charged Domain Walls in a BiFeO3 Island Via Phase-Field Simulations

Dynamics and Manipulation of Ferroelectric Domain Walls in Bismuth Ferrite Thin Films.

Controlled manipulation of conductive ferroelectric domain walls and nanoscale domains in BiFeO3 thin films

Domain wall architecture in tetragonal ferroelectric thin films

Imaging and Quantification of Charged Domain Walls in BiFeO3

Ultrathin Non‐Ising Charged Domain Walls Confined in BiFeO3 Nanocrystals

Electric Field Control of Multiferroic Domain Wall Motion

Hierarchical Domain Structure and Extremely Large Wall Current in Epitaxial BiFeO3 Thin Films

Domain wall functionality in BiFeO3

Topological interfacial states in ferroelectric domain walls of two-dimensional bismuth

Atomic Scale Structure Changes Induced by Charged Domain Walls in Ferroelectric Materials.

Phase Field Simulation of Charged Interface Formation During Ferroelectric Switching

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Interface Engineering Of Domain Structures In Bifeo3 Thin Films

Manipulation of Conductive Domain Walls in Confined Ferroelectric Nano-islands

Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films

Negatively Charged In-Plane and Out-Of-Plane Domain Walls with Oxygen-Vacancy Agglomerations in a Ca-Doped Bismuth-Ferrite Thin Film

Large domain-wall current in BiFeO3 epitaxial thin films