Abstract:Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile memory and logic technologies in which domain walls, rather than domains, serve as an active element. Especially interesting are charged domain walls in ferroelectric structures, which have subnanometre thicknesses and exhibit non-trivial electronic and transport properties that are useful for various nanoelectronics applications(1-3). The ability to deterministically create and manipulate charged domain walls is essential to realize their functional properties in electronic devices. Here we report a strategy for the controllable creation and manipulation of in-plane charged domain walls in BiFeO3 ferroelectric films a few nanometres thick. By using an in situ biasing technique within a scanning transmission electron microscope, an unconventional layer-by-layer switching mechanism is detected in which ferroelectric domain growth occurs in the direction parallel to an applied electric field. Based on atomically resolved electron energy-loss spectroscopy, in situ charge mapping by in-line electron holography and theoretical calculations, we show that oxygen vacancies accumulating at the charged domain walls are responsible for the domain-wall stability and motion. Voltage control of the in-plane domain-wall position within a BiFeO3 film gives rise to multiple non-volatile resistance states, thus demonstrating the key functional property of being a memristor a few unit cells thick. These results promote a better understanding of ferroelectric switching behaviour and provide a new strategy for creating unit-cell-scale devices.

Electric Field Control of Multiferroic Domain Wall Motion

Electric-field-controlled Suppression of Walker Breakdown and Chirality Switching in Magnetic Domain Wall Motion

Manipulation of magnetic domain wall by ferroelectric switching: Dynamic magnetoelectricity at the nanoscale

Manipulation of Magnetic Domain Walls by Ferroelectric Switching: Dynamic Magnetoelectricity at the Nanoscale

Electric-field Control of Electromagnon Propagation and Spin-Wave Injection in a Spiral Multiferroic/ferromagnet Composite

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Efficient domain wall motion driven by the out-of-plane spin polarization

Unusual Domain Evolution in Semiconducting Ferroelectrics: A Phase Field Study

Conduction control at ferroic domain walls via external stimuli.

Ferroelectric polarization and magnetic structure at domain walls in a multiferroic film

Electric‐Field Control of Propagating Spin Waves by Ferroelectric Domain‐Wall Motion in a Multiferroic Heterostructure

Energy Efficient All-Electric-Field-Controlled Multiferroic Magnetic Domain-Wall Logic

Dynamics and Manipulation of Ferroelectric Domain Walls in Bismuth Ferrite Thin Films.

Field Enhancement of Electronic Conductance at Ferroelectric Domain Walls

Low-energy Structural Dynamics of Ferroelectric Domain Walls in Hexagonal Rare-earth Manganites

Curvature Conservation and Conduction Modulation for Symmetric Charged Ferroelectric Domain Walls

Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy

Domain Wall Geometry Controls Conduction in Ferroelectrics.

Domain-wall magnetoelectric coupling in multiferroic hexagonal YbFeO3 films

Current-Induced Domain Wall Motion in a Compensated Ferrimagnet