Abstract:Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile memory and logic technologies in which domain walls, rather than domains, serve as an active element. Especially interesting are charged domain walls in ferroelectric structures, which have subnanometre thicknesses and exhibit non-trivial electronic and transport properties that are useful for various nanoelectronics applications(1-3). The ability to deterministically create and manipulate charged domain walls is essential to realize their functional properties in electronic devices. Here we report a strategy for the controllable creation and manipulation of in-plane charged domain walls in BiFeO3 ferroelectric films a few nanometres thick. By using an in situ biasing technique within a scanning transmission electron microscope, an unconventional layer-by-layer switching mechanism is detected in which ferroelectric domain growth occurs in the direction parallel to an applied electric field. Based on atomically resolved electron energy-loss spectroscopy, in situ charge mapping by in-line electron holography and theoretical calculations, we show that oxygen vacancies accumulating at the charged domain walls are responsible for the domain-wall stability and motion. Voltage control of the in-plane domain-wall position within a BiFeO3 film gives rise to multiple non-volatile resistance states, thus demonstrating the key functional property of being a memristor a few unit cells thick. These results promote a better understanding of ferroelectric switching behaviour and provide a new strategy for creating unit-cell-scale devices.

Conduction control at ferroic domain walls via external stimuli.

Current-driven Domain Wall Dynamics And Its Electric Signature In Ferromagnetic Nanowires

Electric Field Control of Multiferroic Domain Wall Motion

Domain Wall Geometry Controls Conduction in Ferroelectrics.

Controlled manipulation of conductive ferroelectric domain walls and nanoscale domains in BiFeO3 thin films

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Manipulation of Conductive Domain Walls in Confined Ferroelectric Nano-islands

Field Enhancement of Electronic Conductance at Ferroelectric Domain Walls

Conduction at domain walls in oxide multiferroics

Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity

Electrical Control of Anisotropic Ferromagnetic Domains During Antiferromagnetic-Ferromagnetic Phase Transition

Strain-tunable Magnetism at Oxide Domain Walls

Electrical Tunability of Domain Wall Conductivity in LiNbO3 Thin Films

Optical Control of Ferroelectric Domains: Nanoscale Insight into Macroscopic Observations

Controlled Charging of Ferroelastic Domain Walls in Oxide Ferroelectrics

Manipulation of magnetic domain wall by ferroelectric switching: Dynamic magnetoelectricity at the nanoscale

Manipulation of Magnetic Domain Walls by Ferroelectric Switching: Dynamic Magnetoelectricity at the Nanoscale

Curvature Conservation and Conduction Modulation for Symmetric Charged Ferroelectric Domain Walls

Charged ferroelectric domain walls for deterministic a.c. signal control

Dynamic Conductivity of Ferroelectric Domain Walls in Bifeo3

Ferroelectric Domain-Wall Logic Units