Abstract:Ferroelectric materials feature a switchable spontaneous electric polarization and can enable low‐power logic and nonvolatile memories. These applications require reliable and precise control of ferroelectric domains and domain walls in ferroelectric thin films. Mechanical manipulation is a promising route to engineer ferroelectric domains, but it has proved ineffective when going beyond a critical thickness. Here, multi‐step 90° switching polarization reversal processes in (111)‐oriented PbZr0.2Ti0.8O3 thin films by applying mechanical forces along the direction parallel to the domain bands are reported. By probing the interrelationships between the relevant order parameters, coupled lattice distortion and piezoelectricity is revealed to facilitate domain switching from downward to upward in PbZr0.2Ti0.8O3, a mechanism that is supported by the evolution of domains and electrical performances at different temperatures and under varying pressures, respectively. The multi‐step domain reversal processes render PbZr0.2Ti0.8O3 thin films an excellent candidate for multilevel data storage. The study's results have implications for the manipulation of polarization switching in ferroelectrics and open an avenue to domain reversal driven by mechanical loads for the development of next‐generation ferroelectric devices. This study demonstrates that the nano‐twinned ferroelectric domains can be manipulated in a mechanical way. The domain switching from downward to upward is realized by applying the tip force parallel to the domain bands. Our findings open an avenue to the engineering of ferroelectrics for multilevel information storage.

Manipulation of Magnetic Domain Walls by Ferroelectric Switching: Dynamic Magnetoelectricity at the Nanoscale

Manipulation of magnetic domain wall by ferroelectric switching: Dynamic magnetoelectricity at the nanoscale

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Electric-field-controlled Suppression of Walker Breakdown and Chirality Switching in Magnetic Domain Wall Motion

Strain-tunable Magnetism at Oxide Domain Walls

Nanoscopic spin-wave channeling along programmable magnetic domain walls in a CoFeB/BaTiO3 multiferroic heterostructure

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Electric‐Field Control of Propagating Spin Waves by Ferroelectric Domain‐Wall Motion in a Multiferroic Heterostructure

Magnetization-switching dynamics driven by chiral coupling

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Magnetic Domain-Wall Motion Twisted by Nanoscale Probe-Induced Spin Transfer

Current Polarity-Dependent Manipulation of Antiferromagnetic Domains

Dynamics and Manipulation of Ferroelectric Domain Walls in Bismuth Ferrite Thin Films.

Conduction control at ferroic domain walls via external stimuli.

Chiral Interlayer Exchange Coupling for Asymmetric Domain Wall Propagation in Field-Free Magnetization Switching

Voltage-Driven Perpendicular Magnetic Domain Switching In Multiferroic Nanoislands

Current-controlled chirality dynamics in a mesoscopic magnetic domain wall

Controlling domain wall and field-free spin–orbit torque switching in synthetic antiferromagnets

Magnetization Switching Through Spin-Hall-Effect-Induced Chiral Domain Wall Propagation

Mechanical Manipulation of Nano‐Twinned Ferroelectric Domain Structures for Multilevel Data Storage

Electrically Controlled Non-Volatile Switching of Magnetism in Multiferroic Heterostructures Via Engineered Ferroelastic Domain States