Abstract:Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile memory and logic technologies in which domain walls, rather than domains, serve as an active element. Especially interesting are charged domain walls in ferroelectric structures, which have subnanometre thicknesses and exhibit non-trivial electronic and transport properties that are useful for various nanoelectronics applications(1-3). The ability to deterministically create and manipulate charged domain walls is essential to realize their functional properties in electronic devices. Here we report a strategy for the controllable creation and manipulation of in-plane charged domain walls in BiFeO3 ferroelectric films a few nanometres thick. By using an in situ biasing technique within a scanning transmission electron microscope, an unconventional layer-by-layer switching mechanism is detected in which ferroelectric domain growth occurs in the direction parallel to an applied electric field. Based on atomically resolved electron energy-loss spectroscopy, in situ charge mapping by in-line electron holography and theoretical calculations, we show that oxygen vacancies accumulating at the charged domain walls are responsible for the domain-wall stability and motion. Voltage control of the in-plane domain-wall position within a BiFeO3 film gives rise to multiple non-volatile resistance states, thus demonstrating the key functional property of being a memristor a few unit cells thick. These results promote a better understanding of ferroelectric switching behaviour and provide a new strategy for creating unit-cell-scale devices.

Nanoscopic spin-wave channeling along programmable magnetic domain walls in a CoFeB/BaTiO3 multiferroic heterostructure

Electric‐Field Control of Propagating Spin Waves by Ferroelectric Domain‐Wall Motion in a Multiferroic Heterostructure

Electric Field Control of Multiferroic Domain Wall Motion

Manipulation of magnetic domain wall by ferroelectric switching: Dynamic magnetoelectricity at the nanoscale

Manipulation of Magnetic Domain Walls by Ferroelectric Switching: Dynamic Magnetoelectricity at the Nanoscale

Multiferroic Domain Walls in Ferroelectric PbTiO3 with Oxygen Deficiency.

Strain-tunable Magnetism at Oxide Domain Walls

Colossal Magnetoelectric Effect in 3-1 Multiferroic Nanocomposites Originating from Ultrafine Nanodomain Structures

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Coherent magnon-induced domain-wall motion in a magnetic insulator channel

Vector analysis of electric-field-induced antiparallel magnetic domain evolution in ferromagnetic/ferroelectric heterostructures

Magnetization Reversal by Out-of-plane Voltage in BiFeO3-based Multiferroic Heterostructures

Spatially Resolved Ferroelectric Domain-Switching-Controlled Magnetism in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Multiferroic Heterostructure

Spatially Resolved Ferroelectric Domain-Switching-Controlled Magnetism in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Multiferroic Heterostructure.

Current-controlled Propagation of Spin Waves in Antiparallel, Coupled Domains

Current vortices and magnetic fields driven by moving polar twin boundaries in ferroelastic materials

Interface control of the magnetic chirality in CoFeB|MgO heterosctructures with heavy metal underlayers

Interfacial Charge-Mediated Non-Volatile Magnetoelectric Coupling in Co0.3Fe0.7/Ba0.6Sr0.4TiO3/Nb:SrTiO3 Multiferroic Heterostructures

Voltage-Driven Perpendicular Magnetic Domain Switching In Multiferroic Nanoislands

Controlling of the single domain wall propagation in magnetic microwires by magnetostatic interaction

Magnetic-anisotropy modulation in multiferroic heterostructures by ferroelectric domains from first principles