Abstract:Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile memory and logic technologies in which domain walls, rather than domains, serve as an active element. Especially interesting are charged domain walls in ferroelectric structures, which have subnanometre thicknesses and exhibit non-trivial electronic and transport properties that are useful for various nanoelectronics applications(1-3). The ability to deterministically create and manipulate charged domain walls is essential to realize their functional properties in electronic devices. Here we report a strategy for the controllable creation and manipulation of in-plane charged domain walls in BiFeO3 ferroelectric films a few nanometres thick. By using an in situ biasing technique within a scanning transmission electron microscope, an unconventional layer-by-layer switching mechanism is detected in which ferroelectric domain growth occurs in the direction parallel to an applied electric field. Based on atomically resolved electron energy-loss spectroscopy, in situ charge mapping by in-line electron holography and theoretical calculations, we show that oxygen vacancies accumulating at the charged domain walls are responsible for the domain-wall stability and motion. Voltage control of the in-plane domain-wall position within a BiFeO3 film gives rise to multiple non-volatile resistance states, thus demonstrating the key functional property of being a memristor a few unit cells thick. These results promote a better understanding of ferroelectric switching behaviour and provide a new strategy for creating unit-cell-scale devices.

Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity

Field Enhancement of Electronic Conductance at Ferroelectric Domain Walls

Unusual Domain Evolution in Semiconducting Ferroelectrics: A Phase Field Study

Controlled manipulation of conductive ferroelectric domain walls and nanoscale domains in BiFeO3 thin films

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

The Influence of Conductive Nanodomain Walls on the Photovoltaic Effect of BiFeO3 Thin Films

Conduction control at ferroic domain walls via external stimuli.

Ultrathin Non‐Ising Charged Domain Walls Confined in BiFeO3 Nanocrystals

Electric Field Control of Multiferroic Domain Wall Motion

Dynamic Conductivity of Ferroelectric Domain Walls in Bifeo3

Manipulation of Conductive Domain Walls in Confined Ferroelectric Nano-islands

Giant Domain Wall Conductivity in Self‐Assembled BiFeO 3 Nanocrystals

Domain Wall Geometry Controls Conduction in Ferroelectrics.

Conduction at domain walls in oxide multiferroics

Domain Switching Dynamics for ImClO4 Molecular Ferroelectric Thin Films

Dynamics and Manipulation of Ferroelectric Domain Walls in Bismuth Ferrite Thin Films.

Understanding and Predicting Geometrical Constraint Ferroelectric Charged Domain Walls in a BiFeO3 Island Via Phase-Field Simulations

Phase Field Simulation of Charged Interface Formation During Ferroelectric Switching

Curvature Conservation and Conduction Modulation for Symmetric Charged Ferroelectric Domain Walls

Microwave A.c. Conductivity of Domain Walls in Ferroelectric Thin Films.

Imaging and Quantification of Charged Domain Walls in BiFeO3