Abstract:Large domain wall conductivity in insulating ferroelectric thin films provides a new idea for non-destructive readout of domain information of a nonvolatile ferroelectric domain wall memory. However, there are several challenges hindering its development, including the excessive leakage current and insufficient on-state read current. A lot of experimental and theoretical data have referred to the accumulation of oxygen vacancies at the domain wall regions of ferroelectric thin films as the extrinsic contribution of the wall conduction. In this work, we found that the wall current varied with the angle between the applied electric field and the initial polarization, and that the wall current could be increased to 1.9 μA for a bismuth ferrite thin-film device with the reduced oxygen vacancies in contrast to the previous value of 2 nA for the device with rich oxygen vacancies. The oxygen vacancy concentration can be controlled through the thermal annealing of the sample at two atmospheres of 5% hydrogen mixed with argon gas and pure oxygen gas. For the former, the enhanced oxygen vacancies within the annealed sample at the reduced atmosphere decreased the domain wall current by over a few orders of magnitude, in contrast to the significant enhancement of the wall current for the sample in the latter annealed at the oxidizing atmosphere. The change of oxygen vacancy concentration was implied from the Fe2+⇔Fe3+ transition by the X-ray photoelectron spectroscopy analysis. This change confirmed the rigid domain wall conduction mechanism as well as the extrinsic adverse defect compensation of the wall current, paving the way to the exploration of high-power domain-wall nanodevices with sufficient output currents.

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