Abstract:Large domain wall conductivity in insulating ferroelectric thin films provides a new idea for non-destructive readout of domain information of a nonvolatile ferroelectric domain wall memory. However, there are several challenges hindering its development, including the excessive leakage current and insufficient on-state read current. A lot of experimental and theoretical data have referred to the accumulation of oxygen vacancies at the domain wall regions of ferroelectric thin films as the extrinsic contribution of the wall conduction. In this work, we found that the wall current varied with the angle between the applied electric field and the initial polarization, and that the wall current could be increased to 1.9 μA for a bismuth ferrite thin-film device with the reduced oxygen vacancies in contrast to the previous value of 2 nA for the device with rich oxygen vacancies. The oxygen vacancy concentration can be controlled through the thermal annealing of the sample at two atmospheres of 5% hydrogen mixed with argon gas and pure oxygen gas. For the former, the enhanced oxygen vacancies within the annealed sample at the reduced atmosphere decreased the domain wall current by over a few orders of magnitude, in contrast to the significant enhancement of the wall current for the sample in the latter annealed at the oxidizing atmosphere. The change of oxygen vacancy concentration was implied from the Fe2+⇔Fe3+ transition by the X-ray photoelectron spectroscopy analysis. This change confirmed the rigid domain wall conduction mechanism as well as the extrinsic adverse defect compensation of the wall current, paving the way to the exploration of high-power domain-wall nanodevices with sufficient output currents.

Intrinsic conductance of ferroelectric domain walls

Current-driven Domain Wall Dynamics And Its Electric Signature In Ferromagnetic Nanowires

Field Enhancement of Electronic Conductance at Ferroelectric Domain Walls

Unusual Domain Evolution in Semiconducting Ferroelectrics: A Phase Field Study

Domain Wall Geometry Controls Conduction in Ferroelectrics.

Electric Field Control of Multiferroic Domain Wall Motion

Conductive Tail-to-tail Domain Walls in Epitaxial BiFeO3 Films

Ultrathin Non‐Ising Charged Domain Walls Confined in BiFeO3 Nanocrystals

Ferroelectric Domain Wall p-n Junctions

Electric-Field-Induced Domain Walls in Wurtzite Ferroelectrics

Curvature Conservation and Conduction Modulation for Symmetric Charged Ferroelectric Domain Walls

Microwave A.c. Conductivity of Domain Walls in Ferroelectric Thin Films.

Conduction at domain walls in oxide multiferroics

Impact of Domain Wall Conduction on Ferroelectric Domain Reversal Kinetics

Large domain-wall current in BiFeO3 epitaxial thin films

Dynamic Conductivity of Ferroelectric Domain Walls in Bifeo3

Conduction control at ferroic domain walls via external stimuli.

Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity

Manipulation of Conductive Domain Walls in Confined Ferroelectric Nano-islands

First-principles Calculations of Domain Wall Energies of Prototypical Ferroelectric Perovskites

Giant Domain Wall Conductivity in Self‐Assembled BiFeO 3 Nanocrystals