Abstract:Conducting domain walls in an insulating ferroelectric matrix are interesting for the development of next generation multifunctional nanodevices with large output powers. However, electrical conductions are diversified among head-to-head (H-H), neutral (N), and tail-to-tail (T-T) domain walls (DWs) with disputable conduction mechanisms. It is generally accepted that the charged DWs are more electrically conductive than the neutral DWs. However, the charged walls are unstable due to high depolarization energies. Here, we stabilized the H-H DWs, NDWs and T-T DWs within a LiNbO3 transistor by controlling charge injection in compensation of the domain boundary charge under applied drain–gate, drain–source and gate–source voltages. The walls were created through the local 180° domain reversals in different inclined angles, and the transistors in different sizes were fabricated at the surfaces of 5 mol.% MgO-doped LiNbO3 single crystals in monodomain patterns. The NDWs are positively charged due to small inclination angles (~1°) and local sideways meandering behavior of the charged dipoles with electrical conduction that is three orders of magnitude higher than that across the T-T DWs but is one order of magnitude lower than that across the H-H DWs. Voltage dependences of wall currents can be fitted according to the space-charge-limited current equation with an exponential coefficient varying between 2.1 and 3.7 in some specific voltage ranges, implying discontinuous domain retraction in different inclined wall angles against the reduced applied voltage to affect the wall current. This finding provides the fundamental physics to improve domain wall conduction via domain reconstruction and broadens the domain wall application in future nano-devices.

Conductive Tail-to-tail Domain Walls in Epitaxial BiFeO3 Films

Dynamics and Manipulation of Ferroelectric Domain Walls in Bismuth Ferrite Thin Films.

Ultrathin Non‐Ising Charged Domain Walls Confined in BiFeO3 Nanocrystals

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Hierarchical Domain Structure and Extremely Large Wall Current in Epitaxial BiFeO3 Thin Films

Controlled manipulation of conductive ferroelectric domain walls and nanoscale domains in BiFeO3 thin films

Field Enhancement of Electronic Conductance at Ferroelectric Domain Walls

Unusual Domain Evolution in Semiconducting Ferroelectrics: A Phase Field Study

Atomic Level 1D Structural Modulations at the Negatively Charged Domain Walls in BiFeO3 Films

Manipulation of Conductive Domain Walls in Confined Ferroelectric Nano-islands

Strain Induced Enhancement Of Erasable Domain Wall Current In Epitaxial Bifeo3 Thin Films

Large domain-wall current in BiFeO3 epitaxial thin films

Dynamic Conductivity of Ferroelectric Domain Walls in Bifeo3

Imaging and Quantification of Charged Domain Walls in BiFeO3

Curvature Conservation and Conduction Modulation for Symmetric Charged Ferroelectric Domain Walls

Origin of Sawtooth Domain Walls in Ferroelectrics

Computer Simulation Of Ferroelectric Domain Structures In Epitaxial Bifeo3 Thin Films

Conduction at domain walls in oxide multiferroics

Giant Domain Wall Conductivity in Self‐Assembled BiFeO 3 Nanocrystals

Fabrication of Conductive Domain Walls in X-Cut Congruent Thin-film Lithium Niobate Using an Electrical-field Poling Technique（Invited）

Conductions through head-to-head and tail-to-tail domain walls in LiNbO3 nanodevices