Abstract:Conducting domain walls in an insulating ferroelectric matrix are interesting for the development of next generation multifunctional nanodevices with large output powers. However, electrical conductions are diversified among head-to-head (H-H), neutral (N), and tail-to-tail (T-T) domain walls (DWs) with disputable conduction mechanisms. It is generally accepted that the charged DWs are more electrically conductive than the neutral DWs. However, the charged walls are unstable due to high depolarization energies. Here, we stabilized the H-H DWs, NDWs and T-T DWs within a LiNbO3 transistor by controlling charge injection in compensation of the domain boundary charge under applied drain–gate, drain–source and gate–source voltages. The walls were created through the local 180° domain reversals in different inclined angles, and the transistors in different sizes were fabricated at the surfaces of 5 mol.% MgO-doped LiNbO3 single crystals in monodomain patterns. The NDWs are positively charged due to small inclination angles (~1°) and local sideways meandering behavior of the charged dipoles with electrical conduction that is three orders of magnitude higher than that across the T-T DWs but is one order of magnitude lower than that across the H-H DWs. Voltage dependences of wall currents can be fitted according to the space-charge-limited current equation with an exponential coefficient varying between 2.1 and 3.7 in some specific voltage ranges, implying discontinuous domain retraction in different inclined wall angles against the reduced applied voltage to affect the wall current. This finding provides the fundamental physics to improve domain wall conduction via domain reconstruction and broadens the domain wall application in future nano-devices.

Fabrication of Conductive Domain Walls in X-Cut Congruent Thin-film Lithium Niobate Using an Electrical-field Poling Technique（Invited）

Manipulation of Conductive Domain Walls in Confined Ferroelectric Nano-islands

Electrical Tunability of Domain Wall Conductivity in LiNbO3 Thin Films

Controlled manipulation of conductive ferroelectric domain walls and nanoscale domains in BiFeO3 thin films

Conductions through head-to-head and tail-to-tail domain walls in LiNbO3 nanodevices

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Conductive Tail-to-tail Domain Walls in Epitaxial BiFeO3 Films

Dynamics and Manipulation of Ferroelectric Domain Walls in Bismuth Ferrite Thin Films.

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Tilt control of the charged domain walls in lithium niobate

Field Enhancement of Electronic Conductance at Ferroelectric Domain Walls

Towards the reproducible fabrication of conductive ferroelectric domain walls into lithium niobate bulk single crystals

Ultrathin Non‐Ising Charged Domain Walls Confined in BiFeO3 Nanocrystals

Graphical Direct-Writing of Macroscale Domain Structures with Nanoscale Spatial Resolution in Non-Polar-Cut Lithium Niobate on Insulators

Large and accessible conductivity of charged domain walls in lithium niobate

Hybrid Dry and Wet Etching of LiNbO3 Domain-Wall Memory Devices with 90° Etching Angles and Excellent Electrical Properties.

Electric Field Control of Multiferroic Domain Wall Motion

Microwave A.c. Conductivity of Domain Walls in Ferroelectric Thin Films.

Giant Domain Wall Conductivity in Self‐Assembled BiFeO 3 Nanocrystals

Controlled domain wall directions within nanodevices integrated on the surface of LiNbO3 single crystals

Controlled Charging of Ferroelastic Domain Walls in Oxide Ferroelectrics